PMID- 26274095
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20151229
LR  - 20200930
IS  - 1530-6992 (Electronic)
IS  - 1530-6984 (Linking)
VI  - 15
IP  - 9
DP  - 2015 Sep 9
TI  - Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and 
      Organic Light Emitting Diode Switching.
PG  - 5778-83
LID - 10.1021/acs.nanolett.5b01746 [doi]
AB  - We have fabricated dual gate field effect transistors (FETs) with 12 nm-thin 
      black phosphorus (BP) channel on glass substrate, where our BP FETs have a 
      patterned-gate architecture with 30 nm-thick Al2O3 dielectrics on top and bottom 
      of a BP channel. Top gate dielectric has simultaneously been used as device 
      encapsulation layer, controlling the threshold voltage of FETs as well when FETs 
      mainly operate under bottom gate bias. Bottom, top, and dual gate-controlling 
      mobilities were estimated to be 277, 92, and 213 cm(2)/V s, respectively. Maximum 
      ON-current was measured to be  approximately 5 muA at a drain voltage of -0.1 V but to be as 
      high as  approximately 50 muA at -1 V, while ON/OFF current ratio appeared to be 3.6 x 10(3) V. 
      As a result, our dual gate BP FETs demonstrate organic light emitting diode 
      (OLED) switching for green and blue OLEDs, also demonstrating NOR logic functions 
      by separately using top- and bottom-input.
FAU - Kim, Jin Sung
AU  - Kim JS
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Jeon, Pyo Jin
AU  - Jeon PJ
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Lee, Junyeong
AU  - Lee J
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Choi, Kyunghee
AU  - Choi K
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Lee, Hee Sung
AU  - Lee HS
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Cho, Youngsuk
AU  - Cho Y
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Lee, Young Tack
AU  - Lee YT
AD  - Center for Optoelectronic Materials and Devices Post-Silicon Semiconductor 
      Institute, Korea Institute of Science and Technology (KIST) , Hwarangno 14-gil 5, 
      Seongbuk-gu, Seoul 136-791, Korea.
FAU - Hwang, Do Kyung
AU  - Hwang DK
AD  - Center for Optoelectronic Materials and Devices Post-Silicon Semiconductor 
      Institute, Korea Institute of Science and Technology (KIST) , Hwarangno 14-gil 5, 
      Seongbuk-gu, Seoul 136-791, Korea.
FAU - Im, Seongil
AU  - Im S
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20150817
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
OTO - NOTNLM
OT  - Black phosphorus
OT  - NOR logic
OT  - OLED switching
OT  - dual-gate FET
OT  - inverter
EDAT- 2015/08/15 06:00
MHDA- 2015/08/15 06:01
CRDT- 2015/08/15 06:00
PHST- 2015/08/15 06:00 [entrez]
PHST- 2015/08/15 06:00 [pubmed]
PHST- 2015/08/15 06:01 [medline]
AID - 10.1021/acs.nanolett.5b01746 [doi]
PST - ppublish
SO  - Nano Lett. 2015 Sep 9;15(9):5778-83. doi: 10.1021/acs.nanolett.5b01746. Epub 2015 
      Aug 17.