PMID- 26329255
OWN - NLM
STAT- MEDLINE
DCOM- 20160603
LR  - 20181113
IS  - 1475-925X (Electronic)
IS  - 1475-925X (Linking)
VI  - 14 Suppl 2
IP  - Suppl 2
DP  - 2015
TI  - Numerical simulation of ISFET structures for biosensing devices with TCAD tools.
PG  - S3
LID - 10.1186/1475-925X-14-S2-S3 [doi]
AB  - BACKGROUND: Ion Sensitive Field Effect Transistors (ISFETs) are one of the 
      primitive structures for the fabrication of biosensors (BioFETs). Aiming at the 
      optimization of the design and fabrication processes of BioFETs, the correlation 
      between technological parameters and device electrical response can be obtained 
      by means of an electrical device-level simulation. In this work we present a 
      numerical simulation approach to the study of ISFET structures for bio-sensing 
      devices (BioFET) using Synopsys Sentaurus Technology Computer-Aided Design (TCAD) 
      tools. METHODS: The properties of a custom-defined material were modified in 
      order to reproduce the electrolyte behavior. In particular, the parameters of an 
      intrinsic semiconductor material have been set in order to reproduce an 
      electrolyte solution. RESULTS: The electrostatic behaviour (transfer 
      characteristics) of a general BioFET structure has been simulated when the 
      captured target number increases from 1 to 10. The ID current as a function of 
      the VDS voltage for different positions of a single charged block and for 
      different values of the reference electrode have been calculated. CONCLUSIONS: We 
      presented a numerical simulation approach to the study of Ion-Sensitive Field 
      Effect Transistor (ISFET) structures for biosensing devices (BioFETs) using the 
      Synopsys Sentaurus Technology Computer-Aided Design (TCAD) tools. A powerful 
      framework for the design and optimization of biosensor has been devised, thus 
      helping in reducing technology development time and cost. The main finding of the 
      analysis of a general reference BioFET shows that there is no linear relationship 
      between the number of charges and the current modulation. Actually, there is a 
      strong position dependent effect: targets localized near the source region are 
      most effective with respect to targets localized near the drain region. In 
      general, even randomly distributed targets are more efficient with respect to 
      locally grouped targets on the current modulation. Moreover, for the device at 
      hand, a small positive biasing of the electrolyte solution, providing that the 
      transistor goes on, will result in a greater enhancement of the current levels, 
      still retaining a good sensitivity but greatly simplifying the operations of a 
      real device.
FAU - Passeri, Daniele
AU  - Passeri D
FAU - Morozzi, Arianna
AU  - Morozzi A
FAU - Kanxheri, Keida
AU  - Kanxheri K
FAU - Scorzoni, Andrea
AU  - Scorzoni A
LA  - eng
PT  - Journal Article
DEP - 20150813
PL  - England
TA  - Biomed Eng Online
JT  - Biomedical engineering online
JID - 101147518
SB  - IM
MH  - Biosensing Techniques/*instrumentation
MH  - Computer-Aided Design/*instrumentation
MH  - *Models, Theoretical
MH  - Time Factors
MH  - *Transistors, Electronic
PMC - PMC4547192
EDAT- 2015/09/04 06:00
MHDA- 2016/06/04 06:00
PMCR- 2015/08/13
CRDT- 2015/09/03 06:00
PHST- 2015/09/03 06:00 [entrez]
PHST- 2015/09/04 06:00 [pubmed]
PHST- 2016/06/04 06:00 [medline]
PHST- 2015/08/13 00:00 [pmc-release]
AID - 1475-925X-14-S2-S3 [pii]
AID - 10.1186/1475-925X-14-S2-S3 [doi]
PST - ppublish
SO  - Biomed Eng Online. 2015;14 Suppl 2(Suppl 2):S3. doi: 10.1186/1475-925X-14-S2-S3. 
      Epub 2015 Aug 13.