PMID- 26399664
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160125
LR  - 20151014
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 7
IP  - 40
DP  - 2015 Oct 14
TI  - Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 
      Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits.
PG  - 22333-40
LID - 10.1021/acsami.5b06027 [doi]
AB  - Two-dimensional (2D) semiconductor materials with discrete bandgap become 
      important because of their interesting physical properties and potentials toward 
      future nanoscale electronics. Many 2D-based field effect transistors (FETs) have 
      thus been reported. Several attempts to fabricate 2D complementary (CMOS) logic 
      inverters have been made too. However, those CMOS devices seldom showed the most 
      important advantage of typical CMOS: low power consumption. Here, we adopted 
      p-WSe2 and n-MoS2 nanosheets separately for the channels of bottom-gate-patterned 
      FETs, to fabricate 2D dichalcogenide-based hetero-CMOS inverters on the same 
      glass substrate. Our hetero-CMOS inverters with electrically isolated FETs 
      demonstrate novel and superior device performances of a maximum voltage gain as 
       approximately 27, sub-nanowatt power consumption, almost ideal noise margin approaching 0.5VDD 
      (supply voltage, VDD=5 V) with a transition voltage of 2.3 V, and  approximately 800 mus for 
      switching delay. Moreover, our glass-substrate CMOS device nicely performed 
      digital logic (NOT, OR, and AND) and push-pull circuits for organic 
      light-emitting diode switching, directly displaying the prospective of practical 
      applications.
FAU - Jeon, Pyo Jin
AU  - Jeon PJ
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Kim, Jin Sung
AU  - Kim JS
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Lim, June Yeong
AU  - Lim JY
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Cho, Youngsuk
AU  - Cho Y
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Pezeshki, Atiye
AU  - Pezeshki A
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Lee, Hee Sung
AU  - Lee HS
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Yu, Sanghyuck
AU  - Yu S
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Min, Sung-Wook
AU  - Min SW
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
FAU - Im, Seongil
AU  - Im S
AD  - Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, 
      Seodaemun-gu, Seoul 120-749, Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20150930
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - MoS2
OT  - WSe2
OT  - complementary inverter
OT  - glass
OT  - high gain
OT  - sub-nanowatt
EDAT- 2015/09/25 06:00
MHDA- 2015/09/25 06:01
CRDT- 2015/09/25 06:00
PHST- 2015/09/25 06:00 [entrez]
PHST- 2015/09/25 06:00 [pubmed]
PHST- 2015/09/25 06:01 [medline]
AID - 10.1021/acsami.5b06027 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2015 Oct 14;7(40):22333-40. doi: 
      10.1021/acsami.5b06027. Epub 2015 Sep 30.