PMID- 26434774
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160216
LR  - 20151028
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 7
IP  - 42
DP  - 2015 Oct 28
TI  - Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect 
      Transistor: Reduction in Contact Resistance.
PG  - 23589-96
LID - 10.1021/acsami.5b06825 [doi]
AB  - The development of low resistance contacts to 2D transition-metal dichalcogenides 
      (TMDs) is still a big challenge for the future generation field effect 
      transistors (FETs) and optoelectronic devices. Here, we report a chemical doping 
      technique to achieve low contact resistance by keeping the intrinsic properties 
      of few layers WS2. The transfer length method has been used to investigate the 
      effect of chemical doping on contact resistance. After doping, the contact 
      resistance (Rc) of multilayer (ML) WS2 has been reduced to 0.9 kOmega.mum. The 
      significant reduction of the Rc is mainly due to the high electron doping 
      density, thus a reduction in Schottky barrier height, which limits the device 
      performance. The threshold voltage of ML-WS2 FETs confirms a negative shift upon 
      the chemical doping, as further confirmed from the positions of E(1)2g and A1g 
      peaks in Raman spectra. The n-doped samples possess a high drain current of 65 
      muA/mum, with an on/off ratio of 1.05 x 10(6) and a field effect mobility of 34.7 
      cm(2)/(V.s) at room temperature. Furthermore, the photoelectric properties of 
      doped WS2 flakes were also measured under deep ultraviolet light. The potential 
      of using LiF doping in contact engineering of TMDs opens new ways to improve the 
      device performance.
FAU - Khalil, Hafiz M W
AU  - Khalil HM
AD  - Department of Physics and Graphene Research Institute, Sejong University , Seoul 
      143-747, Korea.
FAU - Khan, Muhammad Farooq
AU  - Khan MF
AD  - Department of Physics and Graphene Research Institute, Sejong University , Seoul 
      143-747, Korea.
FAU - Eom, Jonghwa
AU  - Eom J
AD  - Department of Physics and Graphene Research Institute, Sejong University , Seoul 
      143-747, Korea.
FAU - Noh, Hwayong
AU  - Noh H
AD  - Department of Physics and Graphene Research Institute, Sejong University , Seoul 
      143-747, Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20151013
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - DUV
OT  - Schottky barrier
OT  - TLM
OT  - TMDs
OT  - WS2
OT  - contact resistance
EDAT- 2015/10/06 06:00
MHDA- 2015/10/06 06:01
CRDT- 2015/10/06 06:00
PHST- 2015/10/06 06:00 [entrez]
PHST- 2015/10/06 06:00 [pubmed]
PHST- 2015/10/06 06:01 [medline]
AID - 10.1021/acsami.5b06825 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2015 Oct 28;7(42):23589-96. doi: 
      10.1021/acsami.5b06825. Epub 2015 Oct 13.