PMID- 26505031
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20151124
LR  - 20190715
IS  - 1533-4899 (Electronic)
IS  - 1533-4880 (Linking)
VI  - 15
IP  - 5
DP  - 2015 May
TI  - Fabrication and Characterization of Field Effect Transistor Based on High-Aspect 
      Ratio Sulfur-Doped ZnO Nanowires.
PG  - 3956-61
AB  - Well-crystalline sulfur (S) doped ZnO nanowires have been grown via a simple 
      thermal evaporation process on Si substrate using high purity zinc and sulfur 
      powders in presence of oxygen. The as-grown S:ZnO nanowires were characterized in 
      terms of their morphological structural, compositional and optical properties 
      using several techniques such as FESEM, TEM, XRD, EDS and PL. The morphological 
      characterizations revealed that the as-grown nanowires had diameters in the range 
      of 60-100 nm with lengths 5-15 mum. The details structural properties confirmed 
      the well-crystallinity and wurtzite hexagonal phase for the prepared nanowires. 
      Room temperature photoluminescence (PL) spectrum showed a strong green band with 
      a suppressed UV emission. The electrical properties of single S:ZnO nanowire was 
      examined by fabricating single nanowire based field effect transistors (FETs). 
      The detailed electrical transport results showed that S:ZnO nanowires possess 
      n-type semiconducting behavior and exhibited an electron mobility of -67.7 cm2 
      V(-1) s(-1) and a carrier concentration of 2 x 10(17) cm(-3), respectively.
FAU - Kim, Sang Hoon
AU  - Kim SH
FAU - Umar, Ahmad
AU  - Umar A
FAU - Al-Hajry, A
AU  - Al-Hajry A
FAU - Dar, G N
AU  - Dar GN
FAU - Abaker, M
AU  - Abaker M
FAU - Hwang, S W
AU  - Hwang SW
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2015/10/28 06:00
MHDA- 2015/10/28 06:01
CRDT- 2015/10/28 06:00
PHST- 2015/10/28 06:00 [entrez]
PHST- 2015/10/28 06:00 [pubmed]
PHST- 2015/10/28 06:01 [medline]
AID - 10.1166/jnn.2015.9530 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2015 May;15(5):3956-61. doi: 10.1166/jnn.2015.9530.