PMID- 26535782
OWN - NLM
STAT- MEDLINE
DCOM- 20160912
LR  - 20161126
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 7
IP  - 46
DP  - 2015 Dec 14
TI  - Surface group modification and carrier transport properties of layered transition 
      metal carbides (Ti2CT(x), T: -OH, -F and -O).
PG  - 19390-6
LID - 10.1039/c5nr06513e [doi]
AB  - In spite of recent significant research into various two-dimensional (2D) 
      materials after the emergence of graphene, the development of a new 2D material 
      that provides both high mobility and an appropriate energy band gap (which are 
      crucial for various device applications) remains elusive. In this report, we 
      demonstrate that the carrier transport behaviour of 2D Ti2CTx, which belongs to 
      the family of 2D transition metal carbides and nitrides, can be tuned by 
      modifying the surface group Tx (-OH, -F, and -O). Our results show that 2D 
      Ti2C(OH)xFy and Ti2COx films can be obtained via simple chemical treatment, 
      thermal annealing, and mechanical exfoliation processes. For the first time, we 
      study the carrier transport properties of 2D Ti2CTx field effect transistors 
      (FETs), obtaining the high field effect carrier mobilities of 10(4) cm(2) V(-1) 
      s(-1) at room temperature. The temperature dependent resistivity of the Ti2COx 
      film exhibits semiconductor like Arrhenius behaviour at zero gate voltage, from 
      which we estimate the energy gap of 80 meV. One interesting feature of the FETs 
      based on transition metal carbides is that the field effect mobility at room 
      temperature is less sensitive to the measured transport gaps, which may arise 
      from the dominant charge transport of activated carriers over the narrow energy 
      gaps of the transition metal carbides. Our results open up the possibility that 
      new 2D materials with high mobilities and appropriate band gaps can be achieved, 
      and broaden the range of electronic device applications of Ti2CTx films.
FAU - Lai, Shen
AU  - Lai S
AD  - SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University 
      (SKKU), Suwon 440-746, Korea. leesj@skku.edu euyheon@skku.edu.
FAU - Jeon, Jaeho
AU  - Jeon J
FAU - Jang, Sung Kyu
AU  - Jang SK
FAU - Xu, Jiao
AU  - Xu J
FAU - Choi, Young Jin
AU  - Choi YJ
FAU - Park, Jin-Hong
AU  - Park JH
FAU - Hwang, Euyheon
AU  - Hwang E
FAU - Lee, Sungjoo
AU  - Lee S
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20151104
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
RN  - 12070-08-5 (titanium carbide)
RN  - 6RW464FEFF (titanium nitride)
RN  - D1JT611TNE (Titanium)
SB  - IM
EIN - Nanoscale. 2016 Jan 14;8(2):1216. PMID: 26647735
MH  - Surface Properties
MH  - Titanium/*chemistry
EDAT- 2015/11/05 06:00
MHDA- 2016/09/13 06:00
CRDT- 2015/11/05 06:00
PHST- 2015/11/05 06:00 [entrez]
PHST- 2015/11/05 06:00 [pubmed]
PHST- 2016/09/13 06:00 [medline]
AID - 10.1039/c5nr06513e [doi]
PST - ppublish
SO  - Nanoscale. 2015 Dec 14;7(46):19390-6. doi: 10.1039/c5nr06513e. Epub 2015 Nov 4.