PMID- 26574477
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160219
LR  - 20151201
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 26
IP  - 49
DP  - 2015 Dec 11
TI  - Ionic screening effect on low-frequency drain current fluctuations in 
      liquid-gated nanowire FETs.
PG  - 495501
LID - 10.1088/0957-4484/26/49/495501 [doi]
AB  - The ionic screening effect plays an important role in determining the fundamental 
      surface properties within liquid-semiconductor interfaces. In this study, we 
      investigated the characteristics of low-frequency drain current noise in 
      liquid-gated nanowire (NW) field effect transistors (FETs) to obtain physical 
      insight into the effect of ionic screening on low-frequency current fluctuation. 
      When the NW FET was operated close to the gate voltage corresponding to the 
      maximum transconductance, the magnitude of the low-frequency noise for the NW 
      exposed to a low-ionic-strength buffer (0.001 M) was approximately 70% greater 
      than that when exposed to a high-ionic-strength buffer (0.1 M). We propose a 
      noise model, considering the charge coupling efficiency associated with the 
      screening competition between the electrolyte buffer and the NW, to describe the 
      ionic screening effect on the low-frequency drain current noise in liquid-gated 
      NW FET systems. This report not only provides a physical understanding of the 
      ionic screening effect behind the low-frequency current noise in liquid-gated 
      FETs but also offers useful information for developing the technology of NW FETs 
      with liquid-gated architectures for application in bioelectronics, nanosensors, 
      and hybrid nanoelectronics.
FAU - Lu, Ming-Pei
AU  - Lu MP
AD  - National Nano Device Laboratories, National Applied Research Laboratories, 
      Hsinchu 300, Taiwan.
FAU - Vire, Eric
AU  - Vire E
FAU - Montes, Laurent
AU  - Montes L
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20151117
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2015/11/18 06:00
MHDA- 2015/11/18 06:01
CRDT- 2015/11/18 06:00
PHST- 2015/11/18 06:00 [entrez]
PHST- 2015/11/18 06:00 [pubmed]
PHST- 2015/11/18 06:01 [medline]
AID - 10.1088/0957-4484/26/49/495501 [doi]
PST - ppublish
SO  - Nanotechnology. 2015 Dec 11;26(49):495501. doi: 10.1088/0957-4484/26/49/495501. 
      Epub 2015 Nov 17.