PMID- 26695840
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160527
LR  - 20160126
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 10
IP  - 1
DP  - 2016 Jan 26
TI  - Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure.
PG  - 1546-51
LID - 10.1021/acsnano.5b07121 [doi]
AB  - Two-dimensional (2D) molybdenum disulfide (MoS2) is an exciting material due to 
      its unique electrical, optical, and piezoelectric properties. Owing to an 
      intrinsic band gap of 1.2-1.9 eV, monolayer or a-few-layer MoS2 is used for 
      fabricating field effect transistors (FETs) with high electron mobility and 
      on/off ratio. However, the traditional FETs are controlled by an externally 
      supplied gate voltage, which may not be sensitive enough to directly interface 
      with a mechanical stimulus for applications in electronic skin. Here we report a 
      type of top-pressure/force-gated field effect transistors (PGFETs) based on a 
      hybrid structure of a 2D MoS2 flake and 1D ZnO nanowire (NW) array. Once an 
      external pressure is applied, the piezoelectric polarization charges created at 
      the tips of ZnO NWs grown on MoS2 act as a gate voltage to tune/control the 
      source-drain transport property in MoS2. At a 6.25 MPa applied stimulus on a 
      packaged device, the source-drain current can be tuned for  approximately 25%, equivalent to 
      the results of applying an extra -5 V back gate voltage. Another type of PGFET 
      with a dielectric layer (Al2O3) sandwiched between MoS2 and ZnO also shows 
      consistent results. A theoretical model is proposed to interpret the received 
      data. This study sets the foundation for applying the 2D material-based FETs in 
      the field of artificial intelligence.
FAU - Chen, Libo
AU  - Chen L
AD  - Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , 
      Beijing, 100083, China.
FAU - Xue, Fei
AU  - Xue F
AD  - Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , 
      Beijing, 100083, China.
FAU - Li, Xiaohui
AU  - Li X
AD  - Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , 
      Beijing, 100083, China.
FAU - Huang, Xin
AU  - Huang X
AD  - Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , 
      Beijing, 100083, China.
FAU - Wang, Longfei
AU  - Wang L
AD  - Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , 
      Beijing, 100083, China.
FAU - Kou, Jinzong
AU  - Kou J
AD  - Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , 
      Beijing, 100083, China.
FAU - Wang, Zhong Lin
AU  - Wang ZL
AD  - Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , 
      Beijing, 100083, China.
AD  - School of Material Science and Engineering, Georgia Institute of Technology , 
      Atlanta, Georgia 30332, United States.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20151229
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
OTO - NOTNLM
OT  - MoS2
OT  - ZnO
OT  - field effect transistors
OT  - piezotronic effect
OT  - strain/pressure
EDAT- 2015/12/24 06:00
MHDA- 2015/12/24 06:01
CRDT- 2015/12/24 06:00
PHST- 2015/12/24 06:00 [entrez]
PHST- 2015/12/24 06:00 [pubmed]
PHST- 2015/12/24 06:01 [medline]
AID - 10.1021/acsnano.5b07121 [doi]
PST - ppublish
SO  - ACS Nano. 2016 Jan 26;10(1):1546-51. doi: 10.1021/acsnano.5b07121. Epub 2015 Dec 
      29.