PMID- 26726369
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160208
LR  - 20190715
IS  - 1533-4899 (Electronic)
IS  - 1533-4880 (Linking)
VI  - 15
IP  - 10
DP  - 2015 Oct
TI  - Elevated Temperature Operation of 4H-SiC Nanoribbon Field Effect Transistors.
PG  - 7551-4
AB  - We fabricated 4H-SiC nanoribbon field effect transistors (FETs) of various 
      channel thickness (tch) of 100~500 nm by a "top-down" approach, using a 
      lithography and plasma etching process. We studied the dependence of the device 
      transfer characteristics on the channel geometry. This demonstrated that 
      fabricated SiC nanoribbon FETs with a tch of 100 nm show normally-on 
      characteristics, and have a threshold voltage of -12 V, and a maximum 
      transconductance value of 8.8 mS, which shows improved drain current degradation 
      of the SiC nanoribbon FETs with tch = 100 nm at elevated temperature. This can be 
      attributed to the improved heat dissipation, enhanced channel mobility, and 
      together with widening of effective channel thickness depletion induced.
FAU - Kang, Min Seok
AU  - Kang MS
FAU - Yu, Susanna
AU  - Yu S
FAU - Koo, Sang Mo
AU  - Koo SM
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2016/01/05 06:00
MHDA- 2016/01/05 06:01
CRDT- 2016/01/05 06:00
PHST- 2016/01/05 06:00 [entrez]
PHST- 2016/01/05 06:00 [pubmed]
PHST- 2016/01/05 06:01 [medline]
AID - 10.1166/jnn.2015.11166 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2015 Oct;15(10):7551-4. doi: 10.1166/jnn.2015.11166.