PMID- 26735305
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160527
LR  - 20160126
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 10
IP  - 1
DP  - 2016 Jan 26
TI  - Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.
PG  - 1309-16
LID - 10.1021/acsnano.5b06680 [doi]
AB  - Atomically smooth van der Waals materials are structurally stable in a monolayer 
      and a few layers but are susceptible to oxygen-rich environments. In particular, 
      recently emerging materials such as black phosphorus and perovskite have revealed 
      stronger environmental sensitivity than other two-dimensional layered materials, 
      often obscuring the interesting intrinsic electronic and optical properties. 
      Unleashing the true potential of these materials requires oxidation-free sample 
      preparation that protects thin flakes from air exposure. Here, we fabricated 
      few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an 
      integrated vacuum cluster system and study their electronic properties and 
      stability under ambient conditions. By performing all the device fabrication and 
      characterization procedure under an oxygen- and moisture-free environment, we 
      found that few-layer AA-stacking HfS2-FETs display excellent field effect 
      responses (Ion/Ioff  approximately  10(7)) with reduced hysteresis compared to the FETs 
      prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the 
      entire area, increasing the film thickness by 250% at a prolonged oxidation time 
      of >120 h, while defects on the surface are the preferential initial oxidation 
      sites. We further demonstrated that the stability of the device in air is 
      significantly improved by passivating FETs with BN in a vacuum cluster.
FAU - Chae, Sang Hoon
AU  - Chae SH
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Jin, Youngjo
AU  - Jin Y
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Kim, Tae Soo
AU  - Kim TS
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Chung, Dong Seob
AU  - Chung DS
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Na, Hyunyeong
AU  - Na H
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Nam, Honggi
AU  - Nam H
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Kim, Hyun
AU  - Kim H
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Perello, David J
AU  - Perello DJ
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Jeong, Hye Yun
AU  - Jeong HY
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Ly, Thuc Hue
AU  - Ly TH
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
FAU - Lee, Young Hee
AU  - Lee YH
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      double daggerDepartment of Energy Science, and  section signDepartment of Physics, Sungkyunkwan 
      University , Suwon 440-746, Republic of Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20160111
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
OTO - NOTNLM
OT  - boron nitride
OT  - field effect transistor
OT  - glovebox
OT  - hafnium disulfide
OT  - oxidation
OT  - vacuum cluster
EDAT- 2016/01/07 06:00
MHDA- 2016/01/07 06:01
CRDT- 2016/01/07 06:00
PHST- 2016/01/07 06:00 [entrez]
PHST- 2016/01/07 06:00 [pubmed]
PHST- 2016/01/07 06:01 [medline]
AID - 10.1021/acsnano.5b06680 [doi]
PST - ppublish
SO  - ACS Nano. 2016 Jan 26;10(1):1309-16. doi: 10.1021/acsnano.5b06680. Epub 2016 Jan 
      11.