PMID- 26782750
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160718
LR  - 20160129
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 8
IP  - 5
DP  - 2016 Feb 7
TI  - The intrinsic origin of hysteresis in MoS2 field effect transistors.
PG  - 3049-56
LID - 10.1039/c5nr07336g [doi]
AB  - We investigate the hysteresis and gate voltage stress effect in MoS2 field effect 
      transistors (FETs). We observe that both the suspended and the SiO2-supported 
      FETs have large hysteresis in their transfer curves under vacuum which cannot be 
      attributed to the traps at the interface between the MoS2 and the SiO2 or in the 
      SiO2 substrate or the gas adsorption/desorption effect. Our findings indicate 
      that the hysteresis we observe comes from the MoS2 itself, revealing an intrinsic 
      origin of the hysteresis besides some extrinsic factors. The fact that the FETs 
      based on thinner MoS2 have larger hysteresis than that with thicker MoS2 suggests 
      that the surface of MoS2 plays a key role in the hysteresis. The gate voltage 
      sweep range, sweep direction, sweep time and loading history all affect the 
      hysteresis observed in the transfer curves.
FAU - Shu, Jiapei
AU  - Shu J
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices, Department of 
      Electronics, Peking University, Beijing 100871, People's Republic of China. 
      qingchen@pku.edu.cn and Academy for Advanced Interdisciplinary Studies, Peking 
      University, Beijing, 100871, China.
FAU - Wu, Gongtao
AU  - Wu G
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices, Department of 
      Electronics, Peking University, Beijing 100871, People's Republic of China. 
      qingchen@pku.edu.cn.
FAU - Guo, Yao
AU  - Guo Y
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices, Department of 
      Electronics, Peking University, Beijing 100871, People's Republic of China. 
      qingchen@pku.edu.cn.
FAU - Liu, Bo
AU  - Liu B
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices, Department of 
      Electronics, Peking University, Beijing 100871, People's Republic of China. 
      qingchen@pku.edu.cn.
FAU - Wei, Xianlong
AU  - Wei X
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices, Department of 
      Electronics, Peking University, Beijing 100871, People's Republic of China. 
      qingchen@pku.edu.cn.
FAU - Chen, Qing
AU  - Chen Q
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices, Department of 
      Electronics, Peking University, Beijing 100871, People's Republic of China. 
      qingchen@pku.edu.cn.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2016/01/20 06:00
MHDA- 2016/01/20 06:01
CRDT- 2016/01/20 06:00
PHST- 2016/01/20 06:00 [entrez]
PHST- 2016/01/20 06:00 [pubmed]
PHST- 2016/01/20 06:01 [medline]
AID - 10.1039/c5nr07336g [doi]
PST - ppublish
SO  - Nanoscale. 2016 Feb 7;8(5):3049-56. doi: 10.1039/c5nr07336g.