PMID- 26807948
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160802
LR  - 20160223
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 10
IP  - 2
DP  - 2016 Feb 23
TI  - Directed Assembly of Single Wall Carbon Nanotube Field Effect Transistors.
PG  - 2975-81
LID - 10.1021/acsnano.6b00353 [doi]
AB  - The outstanding electronic properties of single wall carbon nanotubes (SWCNTs) 
      have made them prime candidates for future nanoelectronics technologies. One of 
      the main obstacles to the implementation of advanced SWCNT electronics to date is 
      the inability to arrange them in a manner suitable for complex circuits. Directed 
      assembly of SWCNT segments onto lithographically patterned and chemically 
      functionalized substrates is a promising way to organize SWCNTs in topologies 
      that are amenable to integration for advanced applications, but the placement and 
      orientational control required have not yet been demonstrated. We have developed 
      a technique for assembling length sorted and chirality monodisperse DNA-wrapped 
      SWCNT segments on hydrophilic lines patterned on a passivated oxidized silicon 
      substrate. Placement of individual SWCNT segments at predetermined locations was 
      achieved with nanometer accuracy. Three terminal electronic devices, consisting 
      of a single SWCNT segment placed either beneath or on top of metallic 
      source/drain electrodes were fabricated. Devices made with semiconducting 
      nanotubes behaved as typical p-type field effect transistors (FETs), whereas 
      devices made with metallic nanotubes had a finite resistance with little or no 
      gate modulation. This scalable, high resolution approach represents an important 
      step forward toward the potential implementation of complex SWCNT devices and 
      circuits.
FAU - Penzo, Erika
AU  - Penzo E
AD  - Department of Applied Physics and Applied Mathematics, Columbia University , New 
      York, New York 10027, United States.
FAU - Palma, Matteo
AU  - Palma M
AD  - Department of Applied Physics and Applied Mathematics, Columbia University , New 
      York, New York 10027, United States.
FAU - Chenet, Daniel A
AU  - Chenet DA
AD  - Department of Mechanical Engineering, Columbia University , New York, New York 
      10027, United States.
FAU - Ao, Geyou
AU  - Ao G
AD  - National Institute of Standards and Technology , Gaithersburg, Maryland 20899, 
      United States.
FAU - Zheng, Ming
AU  - Zheng M
AD  - National Institute of Standards and Technology , Gaithersburg, Maryland 20899, 
      United States.
FAU - Hone, James C
AU  - Hone JC
AD  - Department of Mechanical Engineering, Columbia University , New York, New York 
      10027, United States.
FAU - Wind, Shalom J
AU  - Wind SJ
AD  - Department of Applied Physics and Applied Mathematics, Columbia University , New 
      York, New York 10027, United States.
LA  - eng
PT  - Journal Article
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20160201
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
OTO - NOTNLM
OT  - DNA-wrapped SWCNT
OT  - carbon nanotube FETs
OT  - carbon nanotubes
OT  - directed assembly
EDAT- 2016/01/26 06:00
MHDA- 2016/01/26 06:01
CRDT- 2016/01/26 06:00
PHST- 2016/01/26 06:00 [entrez]
PHST- 2016/01/26 06:00 [pubmed]
PHST- 2016/01/26 06:01 [medline]
AID - 10.1021/acsnano.6b00353 [doi]
PST - ppublish
SO  - ACS Nano. 2016 Feb 23;10(2):2975-81. doi: 10.1021/acsnano.6b00353. Epub 2016 Feb 
      1.