PMID- 27142861
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180118
LR  - 20181113
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 6
DP  - 2016 May 4
TI  - Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field 
      Effect Transistors.
PG  - 25392
LID - 10.1038/srep25392 [doi]
LID - 25392
AB  - Graphene devices for radio frequency (RF) applications are of great interest due 
      to their excellent carrier mobility and saturation velocity. However, the 
      insufficient current saturation in graphene field effect transistors (FETs) is a 
      barrier preventing enhancements of the maximum oscillation frequency and voltage 
      gain, both of which should be improved for RF transistors. Achieving a high 
      output resistance is therefore a crucial step for graphene to be utilized in RF 
      applications. In the present study, we report high output resistances and voltage 
      gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare 
      silicon as a supporting substrate without an insulating layer under the graphene. 
      The GoSFETs exhibit a maximum output resistance of 2.5 MOmega∙mum, maximum intrinsic 
      voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new 
      route to overcome the limitations of conventional graphene-on-insulator (GoI) 
      FETs and subsequently brings graphene electronics closer to practical usage.
FAU - Song, Seung Min
AU  - Song SM
AD  - Department of Electrical Engineering, KAIST, Daejeon, 305-338 Korea.
FAU - Bong, Jae Hoon
AU  - Bong JH
AD  - Department of Electrical Engineering, KAIST, Daejeon, 305-338 Korea.
FAU - Hwang, Wan Sik
AU  - Hwang WS
AD  - Department of Materials Engineering, Korea Aerospace University, Goyang, 412-791, 
      Korea.
FAU - Cho, Byung Jin
AU  - Cho BJ
AD  - Department of Electrical Engineering, KAIST, Daejeon, 305-338 Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20160504
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
EIN - Sci Rep. 2016 Jun 27;6:28412. PMID: 27346693
PMC - PMC4855167
EDAT- 2016/05/05 06:00
MHDA- 2016/05/05 06:01
PMCR- 2016/05/04
CRDT- 2016/05/05 06:00
PHST- 2015/06/19 00:00 [received]
PHST- 2016/04/11 00:00 [accepted]
PHST- 2016/05/05 06:00 [entrez]
PHST- 2016/05/05 06:00 [pubmed]
PHST- 2016/05/05 06:01 [medline]
PHST- 2016/05/04 00:00 [pmc-release]
AID - srep25392 [pii]
AID - 10.1038/srep25392 [doi]
PST - epublish
SO  - Sci Rep. 2016 May 4;6:25392. doi: 10.1038/srep25392.