PMID- 27214911
OWN - NLM
STAT- MEDLINE
DCOM- 20171025
LR  - 20181113
IS  - 1940-9990 (Electronic)
IS  - 1932-4545 (Print)
IS  - 1932-4545 (Linking)
VI  - 10
IP  - 6
DP  - 2016 Dec
TI  - A 5 nW Quasi-Linear CMOS Hot-Electron Injector for Self-Powered Monitoring of 
      Biomechanical Strain Variations.
PG  - 1143-1151
LID - 10.1109/TBCAS.2016.2523992 [doi]
AB  - Piezoelectricity-driven hot-electron injectors (p-HEI) are used for self-powered 
      monitoring of mechanical activity in biomechanical implants and structures. 
      Previously reported p-HEI devices operate by harvesting energy from a 
      piezoelectric transducer to generate current and voltage references which are 
      then used for initiating and controlling the process of hot-electron injection. 
      As a result, the minimum energy required to activate the device is limited by the 
      power requirements of the reference circuits. In this paper we present a p-HEI 
      device that operates by directly exploiting the self-limiting capability of an 
      energy transducer when driving the process of hot-electron injection in a pMOS 
      floating-gate transistor. As a result, the p-HEI device can activate itself at 
      input power levels less than 5 nW. Using a prototype fabricated in a 0.5- 
      [Formula: see text] bulk CMOS process we validate the functionality of the 
      proposed injector and show that for a fixed input power, its dynamics is 
      quasi-linear with respect to time. The paper also presents measurement results 
      using a cadaver phantom where the fabricated p-HEI device has been integrated 
      with a piezoelectric transducer and is used for self-powered monitoring of 
      mechanical activity.
FAU - Zhou, Liang
AU  - Zhou L
FAU - Abraham, Adam C
AU  - Abraham AC
FAU - Tang, Simon Y
AU  - Tang SY
FAU - Chakrabartty, Shantanu
AU  - Chakrabartty S
LA  - eng
GR  - K01 AR069116/AR/NIAMS NIH HHS/United States
GR  - T32 AR060719/AR/NIAMS NIH HHS/United States
GR  - P30 AR057235/AR/NIAMS NIH HHS/United States
PT  - Journal Article
PT  - Research Support, N.I.H., Extramural
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20160518
PL  - United States
TA  - IEEE Trans Biomed Circuits Syst
JT  - IEEE transactions on biomedical circuits and systems
JID - 101312520
SB  - IM
MH  - Algorithms
MH  - Electrons
MH  - Equipment Design
MH  - Models, Theoretical
MH  - Monitoring, Physiologic/instrumentation/*methods
MH  - *Semiconductors
PMC - PMC5315696
MID - NIHMS841637
EDAT- 2016/05/24 06:00
MHDA- 2017/10/27 06:00
PMCR- 2017/12/01
CRDT- 2016/05/24 06:00
PHST- 2016/05/24 06:00 [pubmed]
PHST- 2017/10/27 06:00 [medline]
PHST- 2016/05/24 06:00 [entrez]
PHST- 2017/12/01 00:00 [pmc-release]
AID - 10.1109/TBCAS.2016.2523992 [doi]
PST - ppublish
SO  - IEEE Trans Biomed Circuits Syst. 2016 Dec;10(6):1143-1151. doi: 
      10.1109/TBCAS.2016.2523992. Epub 2016 May 18.