PMID- 27299184
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180130
LR  - 20180130
IS  - 1948-7185 (Electronic)
IS  - 1948-7185 (Linking)
VI  - 7
IP  - 13
DP  - 2016 Jul 7
TI  - Electron Transport in Graphene Nanoribbon Field-Effect Transistor under Bias and 
      Gate Voltages: Isochemical Potential Approach.
PG  - 2478-82
LID - 10.1021/acs.jpclett.6b00996 [doi]
AB  - Zigzag graphene nanoribbon (zGNR) of narrow width has a moderate energy gap in 
      its antiferromagnetic ground state. So far, first-principles electron transport 
      calculations have been performed using nonequilibrium Green function (NEGF) 
      method combined with density functional theory (DFT). However, the commonly 
      practiced bottom-gate control has not been studied computationally due to the 
      need to simulate an electron reservoir that fixes the chemical potential of 
      electrons in the zGNR and electrodes. Here, we present the isochemical potential 
      scheme to describe the top/back-gate effect using external potential. Then, we 
      examine the change in electronic state under the modulation of chemical potential 
      and the subsequent electron transport phenomena in zGNR transistor under 
      substantial top-/back-gate and bias voltages. The gate potential can activate the 
      device states resulting in a boosted current. This gate-controlled 
      current-boosting could be utilized for designing novel zGNR field effect 
      transistors (FETs).
FAU - Yun, Jeonghun
AU  - Yun J
AD  - Department of Chemistry, Ulsan National Institute of Science and Technology 
      (UNIST) , Ulsan 44919, Korea.
AD  - Department of Chemistry, Pohang University of Science and Technology , Pohang 
      37673, Korea.
FAU - Lee, Geunsik
AU  - Lee G
AD  - Department of Chemistry, Ulsan National Institute of Science and Technology 
      (UNIST) , Ulsan 44919, Korea.
FAU - Kim, Kwang S
AU  - Kim KS
AD  - Department of Chemistry, Ulsan National Institute of Science and Technology 
      (UNIST) , Ulsan 44919, Korea.
LA  - eng
PT  - Journal Article
DEP - 20160620
PL  - United States
TA  - J Phys Chem Lett
JT  - The journal of physical chemistry letters
JID - 101526034
EDAT- 2016/06/15 06:00
MHDA- 2016/06/15 06:01
CRDT- 2016/06/15 06:00
PHST- 2016/06/15 06:00 [entrez]
PHST- 2016/06/15 06:00 [pubmed]
PHST- 2016/06/15 06:01 [medline]
AID - 10.1021/acs.jpclett.6b00996 [doi]
PST - ppublish
SO  - J Phys Chem Lett. 2016 Jul 7;7(13):2478-82. doi: 10.1021/acs.jpclett.6b00996. 
      Epub 2016 Jun 20.