PMID- 27302334
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180717
LR  - 20180717
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 8
IP  - 28
DP  - 2016 Jul 20
TI  - Surface Modulation of Graphene Field Effect Transistors on Periodic Trench 
      Structure.
PG  - 18513-8
LID - 10.1021/acsami.6b02537 [doi]
AB  - In this work, graphene field effect transistors (FETs) were fabricated on a 
      trench structure made by carbonized poly(methylmethacrylate) to modify the 
      graphene surface. The trench-structured devices showed different characteristics 
      depending on the channel orientation and the pitch size of the trenches as well 
      as channel area in the FETs. Periodic corrugations and barriers of suspended 
      graphene on the trench structure were measured by atomic force microscopy and 
      electrostatic force microscopy. Regular barriers of 160 mV were observed for the 
      trench structure with graphene. To confirm the transfer mechanism in the FETs 
      depending on the channel orientation, the ratio of experimental mobility 
      (3.6-3.74) was extracted from the current-voltage characteristics using 
      equivalent circuit simulation. It is shown that the number of barriers increases 
      as the pitch size decreases because the number of corrugations increases from 
      different trench pitches. The noise for the 140 nm pitch trench is 1 order of 
      magnitude higher than that for the 200 nm pitch trench.
FAU - Jin, Jun Eon
AU  - Jin JE
AD  - School of Electrical Engineering, Korea University , Anam-dong, Seongbuk-gu, 
      Seoul 136-713, South Korea.
FAU - Choi, Jun Hee
AU  - Choi JH
AD  - School of Electrical Engineering, Korea University , Anam-dong, Seongbuk-gu, 
      Seoul 136-713, South Korea.
FAU - Yun, Hoyeol
AU  - Yun H
AD  - Division of Quantum Phases and Device, School of Physics, Konkuk University , 
      Seoul 143-701, South Korea.
FAU - Jang, Ho-Kyun
AU  - Jang HK
AD  - School of Electrical Engineering, Korea University , Anam-dong, Seongbuk-gu, 
      Seoul 136-713, South Korea.
FAU - Lee, Byung Chul
AU  - Lee BC
AD  - School of Electrical Engineering, Korea University , Anam-dong, Seongbuk-gu, 
      Seoul 136-713, South Korea.
FAU - Choi, Ajeong
AU  - Choi A
AD  - School of Electrical Engineering, Korea University , Anam-dong, Seongbuk-gu, 
      Seoul 136-713, South Korea.
FAU - Joo, Min-Kyu
AU  - Joo MK
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science, 
      Sungkyunkwan University , Suwon, South Korea.
FAU - Dettlaff-Weglikowska, Urszula
AU  - Dettlaff-Weglikowska U
AD  - Materials Science Consulting & Management, 22113 Oststeinbek, Germany.
FAU - Roth, Siegmar
AU  - Roth S
AD  - The Alan G. MacDiarmid Nano Tech Institute, The University of Texas at Dallas , 
      Richardson, Texas 75080, United States.
FAU - Lee, Sang Wook
AU  - Lee SW
AD  - Division of Quantum Phases and Device, School of Physics, Konkuk University , 
      Seoul 143-701, South Korea.
FAU - Lee, Jae Woo
AU  - Lee JW
AD  - ICT Convergence Technology for Health & Safety and Department of Electronics and 
      Information Engineering, Korea University , 2511 Sejong-ro, Sejong, South Korea.
FAU - Kim, Gyu Tae
AU  - Kim GT
AD  - School of Electrical Engineering, Korea University , Anam-dong, Seongbuk-gu, 
      Seoul 136-713, South Korea.
LA  - eng
PT  - Journal Article
DEP - 20160705
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - corrugation
OT  - field effect transistor
OT  - graphene
OT  - low-frequency noise
OT  - trench
EDAT- 2016/06/16 06:00
MHDA- 2016/06/16 06:01
CRDT- 2016/06/16 06:00
PHST- 2016/06/16 06:00 [entrez]
PHST- 2016/06/16 06:00 [pubmed]
PHST- 2016/06/16 06:01 [medline]
AID - 10.1021/acsami.6b02537 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2016 Jul 20;8(28):18513-8. doi: 
      10.1021/acsami.6b02537. Epub 2016 Jul 5.