PMID- 27346288
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180207
LR  - 20180207
IS  - 1361-648X (Electronic)
IS  - 0953-8984 (Linking)
VI  - 28
IP  - 32
DP  - 2016 Aug 17
TI  - Role of substrate induced electron-phonon interactions in biased graphitic 
      bilayers.
PG  - 325801
LID - 10.1088/0953-8984/28/32/325801 [doi]
AB  - Bilayers of graphitic materials have potential applications in field effect 
      transistors (FETs). A potential difference applied between certain ionic bilayers 
      made from insulating graphitic materials such as BN, ZnO and AlN could reduce gap 
      sizes, turning them into useful semiconductors. On the other hand, opening of a 
      small semiconducting gap occurs in graphene bilayers under applied field. The aim 
      here is to investigate to what extent substrate induced electron-phonon 
      interactions (EPIs) modify this gap change. We examine EPIs in several lattice 
      configurations of graphitic bilayers, using a perturbative approach. The typical 
      effect of EPIs on the ionic bilayers is an undesirable gap widening. The size of 
      this gap change varies considerably with lattice structure and the magnitude of 
      the bias. When bias is larger than the non-interacting gap size, EPIs have the 
      smallest effect on the bandgap, especially in configurations with [Formula: see 
      text] and AB structures. Thus careful selection of substrate, lattice 
      configuration and bias strength to minimise the effects of EPIs could be 
      important for optimising the properties of electronic devices. We use parameters 
      related to BN in this article. In practice, the results presented here are 
      broadly applicable to other graphitic bilayers, and are likely to be 
      qualitatively similar in metal dichalcogenide bilayers such as MoS2, which are 
      already of high interest for their use in FETs.
FAU - Davenport, A R
AU  - Davenport AR
AD  - Department of Physical Sciences, The Open University, Walton Hall, Milton Keynes 
      MK7 6AA, UK.
FAU - Hague, J P
AU  - Hague JP
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20160627
PL  - England
TA  - J Phys Condens Matter
JT  - Journal of physics. Condensed matter : an Institute of Physics journal
JID - 101165248
EDAT- 2016/06/28 06:00
MHDA- 2016/06/28 06:01
CRDT- 2016/06/28 06:00
PHST- 2016/06/28 06:00 [entrez]
PHST- 2016/06/28 06:00 [pubmed]
PHST- 2016/06/28 06:01 [medline]
AID - 10.1088/0953-8984/28/32/325801 [doi]
PST - ppublish
SO  - J Phys Condens Matter. 2016 Aug 17;28(32):325801. doi: 
      10.1088/0953-8984/28/32/325801. Epub 2016 Jun 27.