PMID- 27398546
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160801
LR  - 20190715
IS  - 1533-4899 (Electronic)
IS  - 1533-4880 (Linking)
VI  - 16
IP  - 1
DP  - 2016 Jan
TI  - Optimal Geometry Aspect Ratio of Ellipse-Shaped- Surrounding-Gate Nanowire Field 
      Effect Transistors.
PG  - 920-3
AB  - Theoretically ideally round shape of the surrounding gate may not always 
      guarantee because of limitations of the fabrication process in surrounding-gate 
      nanowire field effect transistors (FETs). These limitations may lead to the 
      formation of an ellipse-shaped surrounding gate with major and minor axes of 
      different lengths. In this paper, we for the first time study the electrical 
      characteristics of ellipse-shaped-surrounding-gate silicon nanowire FETs with 
      different ratio of the major and minor axes. By simultaneously simulating 
      engineering acceptable magnitudes of the threshold voltage roll-off, the drain 
      induced barrier lowering, the subthreshold swing, and the on-/off-state current 
      ratio, an optimal geometry aspect ratio between the channel length and the major 
      and minor axes of the ellipse-shaped-surrounding-gate nanowire FET is concluded.
FAU - Li, Yiming
AU  - Li Y
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2016/07/12 06:00
MHDA- 2016/07/12 06:01
CRDT- 2016/07/12 06:00
PHST- 2016/07/12 06:00 [entrez]
PHST- 2016/07/12 06:00 [pubmed]
PHST- 2016/07/12 06:01 [medline]
AID - 10.1166/jnn.2016.10762 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2016 Jan;16(1):920-3. doi: 10.1166/jnn.2016.10762.