PMID- 27427737
OWN - NLM
STAT- MEDLINE
DCOM- 20160908
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 16
IP  - 6
DP  - 2016 Jun
TI  - Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by 
      Droplet Epitaxy.
PG  - 6465-9
AB  - Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 
      nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) 
      process is demonstrated. DE is an MBE growth technique used to fabricate quantum 
      nanostructures of high crystal quality by supplying group III and group V 
      elements in separate phases. In this work, ordered QRs grown on an ordered 
      nanohole template are compared to self-assembled QRs grown with the same DE 
      technique without the nanohole template. This study allows us to understand and 
      compare the surface kinetics of Ga and InGa droplets when a template is present. 
      It is found that template-grown GaAs QRs form clustered rings which can be 
      attributed to low mobility of Ga droplets resulting in multiple nucleation sites 
      for QR formation when As is supplied. However, the case of template-grown InGaAs 
      QRs only one ring is formed per nanohole; no clustering is observed. The outer QR 
      diameter is a close match to the nanohole template diameter. This can be 
      attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening 
      to form a single large droplet before As is supplied. Thus, well-patterned InGaAs 
      QRs are demonstrated and the kinetics of their growth are better understood which 
      could potentially lead to improvements in the future devices that require the 
      unique properties of patterned QRs.
FAU - Tung, Kar Hoo Patrick
AU  - Tung KH
FAU - Huang, Jian
AU  - Huang J
FAU - Danner, Aaron
AU  - Danner A
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
RN  - 0 (Arsenicals)
RN  - 045A6V3VFX (Indium)
RN  - 27FC46GA44 (gallium arsenide)
RN  - 7631-86-9 (Silicon Dioxide)
RN  - CH46OC8YV4 (Gallium)
SB  - IM
MH  - Arsenicals/*chemistry
MH  - Gallium/*chemistry
MH  - Indium/*chemistry
MH  - Kinetics
MH  - Nanostructures/*chemistry
MH  - Nanotechnology/*methods
MH  - Silicon Dioxide/chemistry
EDAT- 2016/07/19 06:00
MHDA- 2016/09/09 06:00
CRDT- 2016/07/19 06:00
PHST- 2016/07/19 06:00 [entrez]
PHST- 2016/07/19 06:00 [pubmed]
PHST- 2016/09/09 06:00 [medline]
AID - 10.1166/jnn.2016.10849 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2016 Jun;16(6):6465-9. doi: 10.1166/jnn.2016.10849.