PMID- 27451617
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20160825
LR  - 20190715
IS  - 1533-4899 (Electronic)
IS  - 1533-4880 (Linking)
VI  - 16
IP  - 4
DP  - 2016 Apr
TI  - Influence of Temperature Variation on Field Effect Transistor Properties Using a 
      Solution-Processed Liquid Crystalline Semiconductor, 8TNAT8.
PG  - 3277-81
AB  - In this study, we used a liquid crystalline (LC) semiconductor, 8TNAT8, solution 
      (e.g., 0.1 wt% in toluene) for forming an organic semiconductor layer by solution 
      casting method, and fabricated bottom-gate/bottom-contact type field effect 
      transistors (FETs). These LC semiconductors show FET characteristic properties 
      and have high carrier mobility of 0.01 cm2 V-1 s-1. We have investigated the 
      surface morphology and the influence of temperature variation on LC FET 
      properties across the phase transition from crystal to mesophase of a LC 
      semiconductor, 8TNAT8. In the most cases, FET mobility was irreversibly decreased 
      after. temperature heat stress above the melting point of 8TNAT8, owing to the 
      morphological change of LC layer.
FAU - Monobe, Hirosato
AU  - Monobe H
FAU - Kimoto, Masaomi
AU  - Kimoto M
FAU - Shimizu, Yo
AU  - Shimizu Y
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2016/07/28 06:00
MHDA- 2016/07/28 06:01
CRDT- 2016/07/26 06:00
PHST- 2016/07/26 06:00 [entrez]
PHST- 2016/07/28 06:00 [pubmed]
PHST- 2016/07/28 06:01 [medline]
AID - 10.1166/jnn.2016.12299 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2016 Apr;16(4):3277-81. doi: 10.1166/jnn.2016.12299.