PMID- 27476475
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180411
LR  - 20181113
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 6
DP  - 2016 Aug 1
TI  - Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by 
      Ferroelectric Fringe Fields.
PG  - 30646
LID - 10.1038/srep30646 [doi]
LID - 30646
AB  - An enormous amount of research activities has been devoted to developing new 
      types of non-volatile memory devices as the potential replacements of current 
      flash memory devices. Theoretical device modeling was performed to demonstrate 
      that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) 
      junction of metal crossbar structure can be induced by the modulation of electric 
      fringe field, associated with the polarization reversal of an underlying 
      ferroelectric layer. It is demonstrated that single three-terminal 
      EMIM/Ferroelectric structure could form an active memory cell without any 
      additional selection devices. This new structure can open up a way of fabricating 
      all-thin-film-based, high-density, high-speed, and low-power non-volatile memory 
      devices that are stackable to realize 3D memory architecture.
FAU - Jung, Sungchul
AU  - Jung S
AD  - Department of Physics, Ulsan National Institute of Science and Technology 
      (UNIST), Ulsan 44919, Republic of Korea.
FAU - Jeon, Youngeun
AU  - Jeon Y
AD  - School of Electrical and Computer Engineering, Ulsan National Institute of 
      Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
FAU - Jin, Hanbyul
AU  - Jin H
AD  - School of Electrical and Computer Engineering, Ulsan National Institute of 
      Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
FAU - Lee, Jung-Yong
AU  - Lee JY
AD  - Department of Physics, Ulsan National Institute of Science and Technology 
      (UNIST), Ulsan 44919, Republic of Korea.
FAU - Ko, Jae-Hyeon
AU  - Ko JH
AD  - Department of Physics, Hallym University, Chuncheon Gangwondo 24252, Republic of 
      Korea.
FAU - Kim, Nam
AU  - Kim N
AD  - Korea Research Institute of Standards and Science, Daejeon 34113, Republic of 
      Korea.
FAU - Eom, Daejin
AU  - Eom D
AD  - Korea Research Institute of Standards and Science, Daejeon 34113, Republic of 
      Korea.
FAU - Park, Kibog
AU  - Park K
AD  - Department of Physics, Ulsan National Institute of Science and Technology 
      (UNIST), Ulsan 44919, Republic of Korea.
AD  - School of Electrical and Computer Engineering, Ulsan National Institute of 
      Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20160801
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC4967890
EDAT- 2016/08/02 06:00
MHDA- 2016/08/02 06:01
PMCR- 2016/08/01
CRDT- 2016/08/02 06:00
PHST- 2016/02/12 00:00 [received]
PHST- 2016/07/08 00:00 [accepted]
PHST- 2016/08/02 06:00 [entrez]
PHST- 2016/08/02 06:00 [pubmed]
PHST- 2016/08/02 06:01 [medline]
PHST- 2016/08/01 00:00 [pmc-release]
AID - srep30646 [pii]
AID - 10.1038/srep30646 [doi]
PST - epublish
SO  - Sci Rep. 2016 Aug 1;6:30646. doi: 10.1038/srep30646.