PMID- 27479958
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180719
LR  - 20180719
IS  - 1525-8955 (Electronic)
IS  - 0885-3010 (Linking)
VI  - 63
IP  - 10
DP  - 2016 Oct
TI  - Comparative Study of Hydrogen- and Deuterium-Induced Degradation of Ferroelectric 
      (Pb,La)(Zr,Ti)O(3) Capacitors Using Time-of-Flight Secondary Ion Measurement.
PG  - 1668-1673
AB  - Ferroelectric (Pb,La)(Zr,Ti)O(3) (PLZT) capacitors were fabricated with Pt, 
      Al:ZnO (AZO), or Sn:In(2)O(3) (ITO) top electrodes. Hydrogen- or 
      deuterium-induced degradation was investigated for the three capacitors by 
      annealing in a 3% H(2)/balance N(2) or 3% D(2)/balance N(2) ambient environment 
      at 200  degrees C and 1 torr. The remnant polarization of all capacitors decreased after 
      annealing in both H(2) and D(2) ambient after 45 min, and the remnant 
      polarization of the Pt/PLZT/Pt capacitor significantly decreased after 45-min 
      annealing compared with that of the AZO/PLZT/Pt and ITO/PLZT/Pt capacitors, even 
      though the initial remnant polarization for the Pt/PLZT/Pt capacitor was larger. 
      Time-of-flight secondary ion mass spectrometry showed slight differences in 
      hydrogen content for the three different capacitors after H(2) annealing. In 
      contrast, the deuterium content of the Pt/PLZT/Pt and AZO/PLZT/Pt or ITO/PLZT/PT 
      capacitors was significantly different after deuterium annealing. Deuterium depth 
      profiles for the Pt/PLZT/Pt capacitor after annealing showed that deuterium 
      conformally exists in the PLZT layer of the Pt/PLZT/Pt capacitor, and deuterium 
      accumulation under the Pt bottom electrode was also observed. This result 
      suggests that diffusion of deuterium in Pt was much higher than that in PLZT. AZO 
      and ITO top electrodes could act as a hydrogen barrier layer for ferroelectric 
      films.
FAU - Takada, Yoko
AU  - Takada Y
FAU - Okamoto, Naoki
AU  - Okamoto N
FAU - Saito, Takeyasu
AU  - Saito T
FAU - Yoshimura, Takeshi
AU  - Yoshimura T
FAU - Fujimura, Norifumi
AU  - Fujimura N
FAU - Higuchi, Koji
AU  - Higuchi K
FAU - Kitajima, Akira
AU  - Kitajima A
FAU - Shishido, Rie
AU  - Shishido R
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20160727
PL  - United States
TA  - IEEE Trans Ultrason Ferroelectr Freq Control
JT  - IEEE transactions on ultrasonics, ferroelectrics, and frequency control
JID - 9882735
EDAT- 2016/08/02 06:00
MHDA- 2016/08/02 06:01
CRDT- 2016/08/02 06:00
PHST- 2016/08/02 06:00 [pubmed]
PHST- 2016/08/02 06:01 [medline]
PHST- 2016/08/02 06:00 [entrez]
AID - 10.1109/TUFFC.2016.2593585 [doi]
PST - ppublish
SO  - IEEE Trans Ultrason Ferroelectr Freq Control. 2016 Oct;63(10):1668-1673. doi: 
      10.1109/TUFFC.2016.2593585. Epub 2016 Jul 27.