PMID- 27670730 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20180718 LR - 20180718 IS - 1361-6528 (Electronic) IS - 0957-4484 (Linking) VI - 27 IP - 44 DP - 2016 Nov 4 TI - Adjustable hydrazine modulation of single-wall carbon nanotube network field effect transistors from p-type to n-type. PG - 445203 LID - 10.1088/0957-4484/27/44/445203 [doi] AB - Single-wall carbon nanotube (SWCNT) network field effect transistors (FETs), which show decent p-type electronic properties, have been fabricated. The use of hydrazine as an aqueous solution and a strong n-type dopant for the SWCNTs is demonstrated in this paper. The electrical properties are obviously tuned by hydrazine treatment at different concentrations on the surface of the SWCNT network FETs. The transport behavior of SWCNTs can be modulated from p-type to n-type, demonstrating the controllable and adjustable doping effect of hydrazine. With a higher concentration of hydrazine, more electrons can be transferred from the hydrazine molecules to the SWCNT network films, thus resulting in a change of threshold voltage, carrier mobility and on-current. By cleaning the device, the hydrazine doping effects vanish, which indicates that the doping effects of hydrazine are reversible. Through x-ray photoelectron spectroscopy (XPS) characterization, the doping effects of hydrazine have also been studied. FAU - Dai, Ruixuan AU - Dai R AD - Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China. FAU - Xie, Dan AU - Xie D FAU - Xu, Jianlong AU - Xu J FAU - Sun, Yilin AU - Sun Y FAU - Sun, MengXing AU - Sun M FAU - Zhang, Cheng AU - Zhang C FAU - Li, Xian AU - Li X LA - eng PT - Journal Article DEP - 20160927 PL - England TA - Nanotechnology JT - Nanotechnology JID - 101241272 EDAT- 2016/09/28 06:00 MHDA- 2016/09/28 06:01 CRDT- 2016/09/28 06:00 PHST- 2016/09/28 06:00 [entrez] PHST- 2016/09/28 06:00 [pubmed] PHST- 2016/09/28 06:01 [medline] AID - 10.1088/0957-4484/27/44/445203 [doi] PST - ppublish SO - Nanotechnology. 2016 Nov 4;27(44):445203. doi: 10.1088/0957-4484/27/44/445203. Epub 2016 Sep 27.