PMID- 27681666
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 8
IP  - 41
DP  - 2016 Oct 19
TI  - Effect of Al(2)O(3) Deposition on Performance of Top-Gated Monolayer MoS(2)-Based 
      Field Effect Transistor.
PG  - 28130-28135
LID - 10.1021/acsami.6b07271 [doi]
AB  - Deposition of high-k dielectrics on two-dimensional MoS(2) is an important 
      process for successful application of the transition-metal dichalcogenides in 
      electronic devices. Here, we show the effect of H(2)O reactant exposure on 
      monolayer (1L) MoS(2) during atomic layer deposition (ALD) of Al(2)O(3). The 
      results showed that the ALD-Al(2)O(3) caused degradation of the performance of 1L 
      MoS(2) field effect transistors (FETs) owing to the formation of Mo-O bonding and 
      trapping of H(2)O molecules at the Al(2)O(3)/MoS(2) interface. Furthermore, we 
      demonstrated that reduced duration of exposure to H(2)O reactant and 
      postdeposition annealing were essential to the enhancement of the performance of 
      top-gated 1L MoS(2) FETs. The mobility and on/off current ratios were increased 
      by factors of approximately 40 and 10(3), respectively, with reduced duration of 
      exposure to H(2)O reactant and with postdeposition annealing.
FAU - Song, Jeong-Gyu
AU  - Song JG
AD  - School of Electrical and Electronics Engineering, Yonsei University , 262 
      Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
FAU - Kim, Seok Jin
AU  - Kim SJ
AD  - School of Electrical and Electronics Engineering, Yonsei University , 262 
      Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
FAU - Woo, Whang Je
AU  - Woo WJ
AD  - School of Electrical and Electronics Engineering, Yonsei University , 262 
      Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
FAU - Kim, Youngjun
AU  - Kim Y
AD  - School of Electrical and Electronics Engineering, Yonsei University , 262 
      Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
FAU - Oh, Il-Kwon
AU  - Oh IK
AD  - School of Electrical and Electronics Engineering, Yonsei University , 262 
      Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
FAU - Ryu, Gyeong Hee
AU  - Ryu GH
AD  - School of Materials Science and Engineering, Ulsan National Institute of Science 
      and Technology (UNIST) , Ulsan 689-798, Korea.
FAU - Lee, Zonghoon
AU  - Lee Z
AD  - School of Materials Science and Engineering, Ulsan National Institute of Science 
      and Technology (UNIST) , Ulsan 689-798, Korea.
FAU - Lim, Jun Hyung
AU  - Lim JH
AD  - Display R&D Center, Samsung Display Co., Ltd. , Nongseo-dong, Kiheung-gu, Yongin, 
      Gyeonggi-do 449-902, Korea.
FAU - Park, Jusang
AU  - Park J
AD  - School of Electrical and Electronics Engineering, Yonsei University , 262 
      Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
FAU - Kim, Hyungjun
AU  - Kim H
AD  - School of Electrical and Electronics Engineering, Yonsei University , 262 
      Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
LA  - eng
PT  - Journal Article
DEP - 20161004
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - atomic layer deposition
OT  - field-effect transistor
OT  - molybdenum disulfide
OT  - transition-metal dichalcogenides
OT  - two-dimensional materials
EDAT- 2016/09/30 06:00
MHDA- 2016/09/30 06:01
CRDT- 2016/09/30 06:00
PHST- 2016/09/30 06:00 [pubmed]
PHST- 2016/09/30 06:01 [medline]
PHST- 2016/09/30 06:00 [entrez]
AID - 10.1021/acsami.6b07271 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2016 Oct 19;8(41):28130-28135. doi: 
      10.1021/acsami.6b07271. Epub 2016 Oct 4.