PMID- 27748477 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20180130 LR - 20180130 IS - 1463-9084 (Electronic) IS - 1463-9076 (Linking) VI - 18 IP - 46 DP - 2016 Nov 23 TI - A highly efficient g-C(3)N(4)/SiO(2) heterojunction: the role of SiO(2) in the enhancement of visible light photocatalytic activity. PG - 31410-31418 AB - SiO(2), an insulator, hardly has any photocatalytic acitivity due to its intrinsic property, and it is generally used as a hard template to increase the surface area of catalysts. However, in this work, we found that the surface state of the insulator SiO(2) can promote the migration of photogenerated charge carriers, leading to the enhancement of the photooxidation ability of graphitic carbon nitride (g-C(3)N(4)). A one-pot calcination method was employed to prepare g-C(3)N(4)/SiO(2) composites using melamine and SiO(2) as precursors. The composites present considerably high photocatalytic degradation activities for 2,4-dichlorophenol (2,4-DCP) and rhodamine B (RhB) under visible light (lambda > 420 nm) irradiation, which are about 1.53 and 4.18 times as high as those of bulk g-C(3)N(4), respectively. The enhancement of the photocatalytic activity is due to the fact that the introduction of the insulator SiO(2) in g-C(3)N(4)/SiO(2) composites can greatly improve the specific surface area of the composites; more importantly, the impurity energy level of SiO(2) can help accelerate the separation and transfer of electron-hole pairs of g-C(3)N(4). Electron paramagnetic resonance (EPR) spectroscopy and trapping experiments with different radical scavengers show that the main active species of g-C(3)N(4) are superoxide radicals, while holes also play a role in photodegradation. For g-C(3)N(4)/SiO(2)-5, besides superoxide radicals and holes, the effect of hydroxyl radicals was greatly improved. Finally, a possible mechanism for the photogenerated charge carrier migration of the g-C(3)N(4)/SiO(2) photocatalyst was proposed. FAU - Hao, Qiang AU - Hao Q AD - National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China. chendaimei@cugb.edu.cn. FAU - Niu, Xiuxiu AU - Niu X AD - National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China. chendaimei@cugb.edu.cn. FAU - Nie, Changshun AU - Nie C AD - National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China. chendaimei@cugb.edu.cn. FAU - Hao, Simeng AU - Hao S AD - National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China. chendaimei@cugb.edu.cn. FAU - Zou, Wei AU - Zou W AD - National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China. chendaimei@cugb.edu.cn. FAU - Ge, Jiangman AU - Ge J AD - National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China. chendaimei@cugb.edu.cn. FAU - Chen, Daimei AU - Chen D AD - National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China. chendaimei@cugb.edu.cn. FAU - Yao, Wenqing AU - Yao W AD - Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China. yaowq@tsinghua.edu.cn. LA - eng PT - Journal Article PL - England TA - Phys Chem Chem Phys JT - Physical chemistry chemical physics : PCCP JID - 100888160 EDAT- 2016/10/18 06:00 MHDA- 2016/10/18 06:01 CRDT- 2016/10/18 06:00 PHST- 2016/10/18 06:00 [pubmed] PHST- 2016/10/18 06:01 [medline] PHST- 2016/10/18 06:00 [entrez] AID - 10.1039/c6cp06122b [doi] PST - ppublish SO - Phys Chem Chem Phys. 2016 Nov 23;18(46):31410-31418. doi: 10.1039/c6cp06122b.