PMID- 27762139
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180718
LR  - 20180718
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 8
IP  - 44
DP  - 2016 Nov 9
TI  - Extremely Low-Cost, Scalable Oxide Semiconductors Employing Poly(acrylic 
      acid)-Decorated Carbon Nanotubes for Thin-Film Transistor Applications.
PG  - 29858-29865
AB  - In this study, we report for the first time a simple bar-coating process of 
      soluble metal oxide semiconductors, consuming the 0.1 g of precursor solution in 
      4 in. sized devices with a cost of only $0.05. To resolve the issue of critical 
      degradation in device performance observable in slow-evaporation-based film 
      formation processes, we incorporate the unprecedentedly developed, poly(acrylic 
      acid)-decorated multiwalled carbon nanotubes (MWNTs) in oxide semiconductors. It 
      is demonstrated that a field-effect mobility is improved to the value of 7.34 
      cm(2)/(V s) (improvement by a factor of 2) without any critical variation in 
      threshold voltage and on/off current ratio.
FAU - Hong, Gyu Ri
AU  - Hong GR
AD  - Division of Advanced Materials, Korea Research Institute of Chemical Technology 
      (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
AD  - Department of Materials Science and Engineering, Korea University , Seoul 
      136-713, Republic of Korea.
FAU - Lee, Sun Sook
AU  - Lee SS
AD  - Division of Advanced Materials, Korea Research Institute of Chemical Technology 
      (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
FAU - Jo, Yejin
AU  - Jo Y
AD  - Division of Advanced Materials, Korea Research Institute of Chemical Technology 
      (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
FAU - Choi, Min Jun
AU  - Choi MJ
AD  - Division of Physics and Semiconductor Science, Dongguk University , Seoul 04620, 
      Korea.
FAU - Kang, Yun Chan
AU  - Kang YC
AD  - Department of Materials Science and Engineering, Korea University , Seoul 
      136-713, Republic of Korea.
FAU - Ryu, Beyong-Hwan
AU  - Ryu BH
AD  - Division of Advanced Materials, Korea Research Institute of Chemical Technology 
      (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
FAU - Chung, Kwun-Bum
AU  - Chung KB
AD  - Division of Physics and Semiconductor Science, Dongguk University , Seoul 04620, 
      Korea.
FAU - Choi, Youngmin
AU  - Choi Y
AD  - Division of Advanced Materials, Korea Research Institute of Chemical Technology 
      (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
FAU - Jeong, Sunho
AU  - Jeong S
AD  - Division of Advanced Materials, Korea Research Institute of Chemical Technology 
      (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
LA  - eng
PT  - Journal Article
DEP - 20161031
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - carbon nanotube
OT  - low cost
OT  - oxide semiconductor
OT  - scalable
OT  - thin-film transistor
EDAT- 2016/11/01 06:00
MHDA- 2016/11/01 06:01
CRDT- 2016/11/01 06:00
PHST- 2016/11/01 06:00 [pubmed]
PHST- 2016/11/01 06:01 [medline]
PHST- 2016/11/01 06:00 [entrez]
AID - 10.1021/acsami.6b08950 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2016 Nov 9;8(44):29858-29865. doi: 
      10.1021/acsami.6b08950. Epub 2016 Oct 31.