PMID- 27762315
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180410
LR  - 20181113
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 6
DP  - 2016 Oct 20
TI  - Biologically templated assembly of hybrid semiconducting nanomesh for high 
      performance field effect transistors and sensors.
PG  - 35591
LID - 10.1038/srep35591 [doi]
LID - 35591
AB  - Delicately assembled composites of semiconducting nanomaterials and biological 
      materials provide an attractive interface for emerging applications, such as 
      chemical/biological sensors, wearable health monitoring devices, and therapeutic 
      agent releasing devices. The nanostructure of composites as a channel and a 
      sensing material plays a critical role in the performance of field effect 
      transistors (FETs). Therefore, it is highly desirable to prepare elaborate 
      composite that can allow the fabrication of high performance FETs and also 
      provide high sensitivity and selectivity in detecting specific 
      chemical/biological targets. In this work, we demonstrate that high performance 
      FETs can be fabricated with a hydrodynamically assembled composite, a 
      semiconducting nanomesh, of semiconducting single-walled carbon nanotubes 
      (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity 
      toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~10(4)) of 
      FETs. We also show that the threshold voltage and the channel current of the 
      nanomesh FETs are sensitive to the change of the M13 phage surface charge. This 
      biological gate effect of the phage enables the detection of biologically 
      important molecules such as dopamine and bisphenol A using nanomesh-based FETs. 
      Our results provide a new insight for the preparation of composite material 
      platform for highly controllable bio/electronics interfaces.
FAU - Byeon, Hye-Hyeon
AU  - Byeon HH
AD  - Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, 
      Seoul, 02792, Republic of Korea.
AD  - Department of Nano Semiconductor Engineering, Korea University, Seoul, 02841, 
      Republic of Korea.
FAU - Lee, Seung-Woo
AU  - Lee SW
AD  - Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, 
      Seoul, 02792, Republic of Korea.
FAU - Lee, Eun-Hee
AU  - Lee EH
AD  - Department of Environmental Science and Engineering, Ewha Womans University, 
      Seoul, 03760, Republic of Korea.
FAU - Kim, Woong
AU  - Kim W
AD  - Department of Materials Science and Engineering, Korea University, Seoul, 02841, 
      Republic of Korea.
FAU - Yi, Hyunjung
AU  - Yi H
AD  - Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, 
      Seoul, 02792, Republic of Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20161020
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC5071876
EDAT- 2016/10/21 06:00
MHDA- 2016/10/21 06:01
PMCR- 2016/10/20
CRDT- 2016/10/21 06:00
PHST- 2016/07/07 00:00 [received]
PHST- 2016/10/03 00:00 [accepted]
PHST- 2016/10/21 06:00 [pubmed]
PHST- 2016/10/21 06:01 [medline]
PHST- 2016/10/21 06:00 [entrez]
PHST- 2016/10/20 00:00 [pmc-release]
AID - srep35591 [pii]
AID - 10.1038/srep35591 [doi]
PST - epublish
SO  - Sci Rep. 2016 Oct 20;6:35591. doi: 10.1038/srep35591.