PMID- 27869222
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180510
LR  - 20181113
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 6
DP  - 2016 Nov 21
TI  - Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm 
      silicon (111) substrates employing different buffer layer configurations.
PG  - 37588
LID - 10.1038/srep37588 [doi]
LID - 37588
AB  - AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm 
      diameter Si(111) substrates by using three different buffer layer configurations: 
      (a) Thick-GaN/3 x Al(x)Ga(1-x)N/AlN, (b) Thin-GaN/3 x Al(x)Ga(1-x)N/AlN, and 
      (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 mum) wafer. Scanning 
      electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross 
      section transmission electron microscopy, optical microscopy, atomic-force 
      microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (omega/2theta scan 
      and symmetric/asymmetric omega scan (rocking curve scan), reciprocal space mapping) 
      and Hall effect measurements are employed to study the structural, optical, and 
      electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer 
      layer stacks (i.e. thickness and content) on defectivity, stress, and 
      two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. 
      It is shown that 2DEG characteristics are heavily affected by the employed buffer 
      layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we 
      report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG 
      carrier concentration significantly. Buffer layer engineering is shown to be 
      essential for achieving high 2DEG mobility (>1800 cm(2)/V∙s) and 2DEG carrier 
      concentration (>1.0 x 10(13) cm(-2)) on Si(111) substrates.
FAU - Lee, H-P
AU  - Lee HP
AD  - Department of Electrical and Computer Engineering, University of Illinois at 
      Urbana-Champaign, Urbana, Illinois 61801, USA.
AD  - Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 
      Urbana, Illinois 61801, USA.
FAU - Perozek, J
AU  - Perozek J
AD  - Department of Electrical and Computer Engineering, University of Illinois at 
      Urbana-Champaign, Urbana, Illinois 61801, USA.
AD  - Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 
      Urbana, Illinois 61801, USA.
FAU - Rosario, L D
AU  - Rosario LD
AD  - Department of Electrical and Computer Engineering, University of Illinois at 
      Urbana-Champaign, Urbana, Illinois 61801, USA.
AD  - Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 
      Urbana, Illinois 61801, USA.
FAU - Bayram, C
AU  - Bayram C
AD  - Department of Electrical and Computer Engineering, University of Illinois at 
      Urbana-Champaign, Urbana, Illinois 61801, USA.
AD  - Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 
      Urbana, Illinois 61801, USA.
LA  - eng
PT  - Journal Article
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20161121
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC5116587
EDAT- 2016/11/22 06:00
MHDA- 2016/11/22 06:01
PMCR- 2016/11/21
CRDT- 2016/11/22 06:00
PHST- 2016/08/23 00:00 [received]
PHST- 2016/10/31 00:00 [accepted]
PHST- 2016/11/22 06:00 [entrez]
PHST- 2016/11/22 06:00 [pubmed]
PHST- 2016/11/22 06:01 [medline]
PHST- 2016/11/21 00:00 [pmc-release]
AID - srep37588 [pii]
AID - 10.1038/srep37588 [doi]
PST - epublish
SO  - Sci Rep. 2016 Nov 21;6:37588. doi: 10.1038/srep37588.