PMID- 27934172 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20180718 LR - 20180718 IS - 1944-8252 (Electronic) IS - 1944-8244 (Linking) VI - 8 IP - 48 DP - 2016 Dec 7 TI - Crystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells. PG - 32805-32814 AB - Synthesis of high quality perovskite absorber is a key factor in determining the performance of the solar cells. We demonstrate that hybrid chemical vapor deposition (HCVD) growth technique can provide high level of versatility and repeatability to ensure the optimal conditions for the growth of the perovskite films as well as potential for batch processing. It is found that the growth ambient and degree of crystallization of CH(3)NH(3)PbI(3) (MAPI) have strong impact on the defect density of MAPI. We demonstrate that HCVD process with slow postdeposition cooling rate can significantly reduce the density of shallow and deep traps in the MAPI due to enhanced material crystallization, while a mixed O(2)/N(2) carrier gas is effective in passivating both shallow and deep traps. By careful control of the perovskite growth process, a champion device with power conversion efficiency of 17.6% is achieved. Our work complements the existing theoretical studies on different types of trap states in MAPI and fills the gap on the theoretical analysis of the interaction between deep levels and oxygen. The experimental results are consistent with the theoretical predictions. FAU - Ng, Annie AU - Ng A AD - Department of Electronic and Information Engineering, The Hong Kong Polytechnic University , Hong Kong, P.R. China. FAU - Ren, Zhiwei AU - Ren Z AD - Department of Electronic and Information Engineering, The Hong Kong Polytechnic University , Hong Kong, P.R. China. FAU - Shen, Qian AU - Shen Q AD - Department of Electronic and Information Engineering, The Hong Kong Polytechnic University , Hong Kong, P.R. China. FAU - Cheung, Sin Hang AU - Cheung SH AD - Department of Physics, Hong Kong Baptist University , Hong Kong, P.R. China. FAU - Gokkaya, Huseyin Cem AU - Gokkaya HC AD - Department of Electronic and Information Engineering, The Hong Kong Polytechnic University , Hong Kong, P.R. China. FAU - So, Shu Kong AU - So SK AD - Department of Physics, Hong Kong Baptist University , Hong Kong, P.R. China. FAU - Djurisic, Aleksandra B AU - Djurisic AB AD - Department of Physics, University of Hong Kong , Hong Kong, P.R. China. FAU - Wan, Yangyang AU - Wan Y AD - Hefei National Laboratory of Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, CAS Key Laboratory of Materials for Energy Conversion, and Department of Materials Science and Engineering, University of Science and Technology of China , Hefei, Anhui 230000, P.R. China. FAU - Wu, Xiaojun AU - Wu X AD - Hefei National Laboratory of Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, CAS Key Laboratory of Materials for Energy Conversion, and Department of Materials Science and Engineering, University of Science and Technology of China , Hefei, Anhui 230000, P.R. China. FAU - Surya, Charles AU - Surya C AD - Department of Electronic and Information Engineering, The Hong Kong Polytechnic University , Hong Kong, P.R. China. LA - eng PT - Journal Article DEP - 20161121 PL - United States TA - ACS Appl Mater Interfaces JT - ACS applied materials & interfaces JID - 101504991 OTO - NOTNLM OT - cooling rates OT - crystallization OT - defects OT - growth ambient OT - hybrid chemical vapor deposition OT - passivation OT - perovskites OT - solar cells EDAT- 2016/12/10 06:00 MHDA- 2016/12/10 06:01 CRDT- 2016/12/10 06:00 PHST- 2016/12/10 06:00 [entrez] PHST- 2016/12/10 06:00 [pubmed] PHST- 2016/12/10 06:01 [medline] AID - 10.1021/acsami.6b07513 [doi] PST - ppublish SO - ACS Appl Mater Interfaces. 2016 Dec 7;8(48):32805-32814. doi: 10.1021/acsami.6b07513. Epub 2016 Nov 21.