PMID- 28058833
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180503
LR  - 20180503
IS  - 1520-5126 (Electronic)
IS  - 0002-7863 (Linking)
VI  - 139
IP  - 3
DP  - 2017 Jan 25
TI  - De Novo Discovery of [Hdabco]BF(4) Molecular Ferroelectric Thin Film for 
      Nonvolatile Low-Voltage Memories.
PG  - 1319-1324
LID - 10.1021/jacs.6b12377 [doi]
AB  - To date, the field of ferroelectric random access memories (FeRAMs) is mainly 
      dominated by inorganic ferroelectric thin films like Pb(Zr,Ti)O(3), which suffer 
      from the issues of environmental harmfulness, high processing temperatures, and 
      high fabrication costs. In these respects, molecular ferroelectric thin films are 
      particularly advantageous and thus become promising alternatives to the 
      conventional inorganic ones. For the prospect of FeRAMs applications, they should 
      fulfill the requirements of effective polarization switching and low-voltage, 
      high-speed operation. Despite recent advancements, molecular ferroelectric thin 
      films with such high performance still remain a huge blank. Herein we present the 
      first example of a large-area continuous biaxial molecular ferroelectric thin 
      film that gets very close to the goal of application in FeRAMs: [Hdabco]BF(4) 
      (dabco = diazabicyclo[2.2.2]octane). In addition to excellent film performance, 
      it is the coexistence of a low coercive voltage of  approximately 12 V and ultrafast 
      polarization switching at a significantly high frequency of 20 kHz that affords 
      [Hdabco]BF(4) considerable potential for memory devices. Particularly, 
      piezoresponse force microscopy (PFM) clearly demonstrates the four polarization 
      directions and polarization switching at a low voltage down to  approximately 4.2 V (with an 
       approximately 150 nm thick film). This innovative work on high-performance molecular 
      ferroelectric thin films, which can be compatible with wearable devices, will 
      inject new vitality to the low-power information field.
FAU - Shi, Ping-Ping
AU  - Shi PP
AD  - Ordered Matter Science Research Center, Southeast University , Nanjing 211189, P. 
      R. China.
FAU - Tang, Yuan-Yuan
AU  - Tang YY
AD  - Ordered Matter Science Research Center, Southeast University , Nanjing 211189, P. 
      R. China.
FAU - Li, Peng-Fei
AU  - Li PF
AD  - Ordered Matter Science Research Center, Southeast University , Nanjing 211189, P. 
      R. China.
FAU - Ye, Heng-Yun
AU  - Ye HY
AD  - Ordered Matter Science Research Center, Southeast University , Nanjing 211189, P. 
      R. China.
FAU - Xiong, Ren-Gen
AU  - Xiong RG
AUID- ORCID: 0000-0003-2364-0193
AD  - Ordered Matter Science Research Center, Southeast University , Nanjing 211189, P. 
      R. China.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20170117
PL  - United States
TA  - J Am Chem Soc
JT  - Journal of the American Chemical Society
JID - 7503056
EDAT- 2017/01/07 06:00
MHDA- 2017/01/07 06:01
CRDT- 2017/01/07 06:00
PHST- 2017/01/07 06:00 [pubmed]
PHST- 2017/01/07 06:01 [medline]
PHST- 2017/01/07 06:00 [entrez]
AID - 10.1021/jacs.6b12377 [doi]
PST - ppublish
SO  - J Am Chem Soc. 2017 Jan 25;139(3):1319-1324. doi: 10.1021/jacs.6b12377. Epub 2017 
      Jan 17.