PMID- 28074784
OWN - NLM
STAT- Publisher
LR  - 20240227
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 28
IP  - 7
DP  - 2017 Jan 11
TI  - Electronic properties and transistors of the NbS(2)-MoS(2)-NbS(2) NR 
      heterostructure.
PG  - 075702
LID - 10.1088/1361-6528/aa5365 [doi]
AB  - Based on density function theory and nonequilibrium Green's functions, we 
      construct a NbS(2)-MoS(2)-NbS(2) NR inplane heterostructure. The effects 
      of channel length, width, chirality and vacancy of the heterostructure 
      on transport properties are systematically investigated. The electron transport 
      of the armchair-edge heterostructure device shows ballistic transport properties, 
      while the zigzag-edge heterostructure device exhibits resonance tunneling 
      transport properties. Further study indicates NbS(2)-MoS(2)-NbS(2) field effect 
      transistors (FETs) to be excellent ambipolar transistors. The FETs have high 
      performances with current on/off ratio 4.7 x 10(5) and subthreshold swing 90 
      mV/decade with channel length m = 16 and width n = 6.  Increases in the channel 
      length sharply reduce the off-state current and enhance the performance of the 
      devices significantly.
FAU - Liu, Qi
AU  - Liu Q
AD  - School of Physics and Electronics, and Institute of Super-Microstructure and 
      Ultrafast Process in Advanced Materials, Central South University, Changsha 
      410083, People's Republic of China.
FAU - Ouyang, Fangping
AU  - Ouyang F
FAU - Yang, Zhixiong
AU  - Yang Z
FAU - Peng, Shenglin
AU  - Peng S
FAU - Zhou, Wenzhe
AU  - Zhou W
FAU - Zou, Hui
AU  - Zou H
FAU - Long, Mengqiu
AU  - Long M
FAU - Pan, Jiangling
AU  - Pan J
LA  - eng
PT  - Journal Article
DEP - 20170111
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2017/01/12 06:00
MHDA- 2017/01/12 06:00
CRDT- 2017/01/12 06:00
PHST- 2017/01/12 06:00 [entrez]
PHST- 2017/01/12 06:00 [pubmed]
PHST- 2017/01/12 06:00 [medline]
AID - 10.1088/1361-6528/aa5365 [doi]
PST - aheadofprint
SO  - Nanotechnology. 2017 Jan 11;28(7):075702. doi: 10.1088/1361-6528/aa5365.