PMID- 28210007
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20240324
IS  - 0022-3727 (Print)
IS  - 0022-3727 (Linking)
VI  - 50
IP  - 2
DP  - 2017 Jan 18
TI  - Annealing Stability Study of Co(20)Fe(60)B(20)\MgO\ Co(20)Fe(60)B(20) 
      Perpendicular Magnetic Tunnel Junctions.
LID - 025006 [pii]
LID - 10.1088/1361-6463/50/2/025006 [doi]
AB  - A full Co(20)Fe(60)B(20)\MgO\ Co(20)Fe(60)B(20) perpendicular magnetic tunnel 
      junction (pMTJ) with (Co\Pt) multilayers as pinning layers and different 
      functional multilayers stacks were made and annealed at different temperatures. 
      The tunneling magnetoresistance ratio (TMR) and MgO barrier resistance-area 
      product (RA) were measured and analyzed as a function of annealing temperature. 
      The TMR of pMTJs dramatically declines with increasing annealing temperatures 
      from 320  degrees C to 400  degrees C while the RA increases with temperature from 375  degrees C to 450 
       degrees C. The pMTJs and partial stacks were also measured in a vibrating sample 
      magnetometer (VSM). We found that the (Co\Pt) multilayers are very stable and 
      maintain a magnetization direction perpendicular to the film plane up to 450  degrees C. 
      However, the magnetization direction of the CoFeB above and below the MgO barrier 
      rotates from perpendicular to in-plane with increasing annealing temperature. 
      Furthermore, the CoFeB layer influences the adjacent (Co\Pt) layers to rotate at 
      the same time. The pMTJs' elemental depth profiles in the as deposited and 
      annealed states were determined by Secondary Ion Mass Spectrometry (SIMS). We 
      found that Boron and Tantalum migrate towards the top of the stack. The other 
      elements (Platinum, Cobalt, Ruthenium, and Magnesium) are very stable and do not 
      interdiffuse during annealing up to 450 degrees C.
FAU - Chen, P J
AU  - Chen PJ
AD  - National Institute of Standards and Technology, Gaithersburg, MD 20899-8552; 
      Theiss Research, 7411 Eads Ave.La Jolla, CA 92037.
FAU - Zhu, M
AU  - Zhu M
AD  - Colleges of Nanoscale Science & Engineering, SUNY Polytechnic Institute, Albany, 
      NY 12203.
FAU - Tibus, S
AU  - Tibus S
AD  - Singulus Technologies AG, 63796 Kahl am Main, Germany.
FAU - Dyer, T
AU  - Dyer T
AD  - SEMATECH Inc., 257 Fuller Rd., Albany, NY 12203.
FAU - Piccirillo, J
AU  - Piccirillo J
AD  - Colleges of Nanoscale Science & Engineering, SUNY Polytechnic Institute, Albany, 
      NY 12203.
FAU - Ocker, B
AU  - Ocker B
AD  - Singulus Technologies AG, 63796 Kahl am Main, Germany.
FAU - Shull, R D
AU  - Shull RD
AD  - National Institute of Standards and Technology, Gaithersburg, MD 20899-8552.
LA  - eng
GR  - 9999-NIST/Intramural NIST DOC/United States
PT  - Journal Article
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20161202
PL  - England
TA  - J Phys D Appl Phys
JT  - Journal of physics D: Applied physics
JID - 1256300
PMC - PMC5304246
MID - NIHMS847852
EDAT- 2017/02/18 06:00
MHDA- 2017/02/18 06:01
PMCR- 2018/01/18
CRDT- 2017/02/18 06:00
PHST- 2017/02/18 06:00 [entrez]
PHST- 2017/02/18 06:00 [pubmed]
PHST- 2017/02/18 06:01 [medline]
PHST- 2018/01/18 00:00 [pmc-release]
AID - 025006 [pii]
AID - 10.1088/1361-6463/50/2/025006 [doi]
PST - ppublish
SO  - J Phys D Appl Phys. 2017 Jan 18;50(2):025006. doi: 10.1088/1361-6463/50/2/025006. 
      Epub 2016 Dec 2.