PMID- 28218234
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180730
LR  - 20181113
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 7
DP  - 2017 Feb 20
TI  - Durability-enhanced two-dimensional hole gas of C-H diamond surface for 
      complementary power inverter applications.
PG  - 42368
LID - 10.1038/srep42368 [doi]
LID - 42368
AB  - Complementary power field effect transistors (FETs) based on wide bandgap 
      materials not only provide high-voltage switching capability with the reduction 
      of on-resistance and switching losses, but also enable a smart inverter system by 
      the dramatic simplification of external circuits. However, p-channel power FETs 
      with equivalent performance to those of n-channel FETs are not obtained in any 
      wide bandgap material other than diamond. Here we show that a breakdown voltage 
      of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor 
      (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic 
      layer deposited (ALD) Al(2)O(3) induces the 2DHG ubiquitously on a 
      hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator 
      and passivation layer. The high voltage performance is equivalent to that of 
      state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current 
      density in the on-state is also comparable to that of these two FETs with similar 
      device size and V(B).
FAU - Kawarada, Hiroshi
AU  - Kawarada H
AD  - Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, 
      Shinjuku-ku, Tokyo 169-8555, Japan.
AD  - The Kagami Memorial Laboratory for Materials Science and Technology, Waseda 
      University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan.
AD  - Research Organization for Nano &Life Innovation, Waseda University, 513 
      Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan.
FAU - Yamada, Tetsuya
AU  - Yamada T
AD  - Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, 
      Shinjuku-ku, Tokyo 169-8555, Japan.
FAU - Xu, Dechen
AU  - Xu D
AD  - Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, 
      Shinjuku-ku, Tokyo 169-8555, Japan.
FAU - Tsuboi, Hidetoshi
AU  - Tsuboi H
AD  - Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, 
      Shinjuku-ku, Tokyo 169-8555, Japan.
FAU - Kitabayashi, Yuya
AU  - Kitabayashi Y
AD  - Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, 
      Shinjuku-ku, Tokyo 169-8555, Japan.
FAU - Matsumura, Daisuke
AU  - Matsumura D
AD  - Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, 
      Shinjuku-ku, Tokyo 169-8555, Japan.
FAU - Shibata, Masanobu
AU  - Shibata M
AD  - Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, 
      Shinjuku-ku, Tokyo 169-8555, Japan.
FAU - Kudo, Takuya
AU  - Kudo T
AD  - Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, 
      Shinjuku-ku, Tokyo 169-8555, Japan.
FAU - Inaba, Masafumi
AU  - Inaba M
AD  - Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, 
      Shinjuku-ku, Tokyo 169-8555, Japan.
FAU - Hiraiwa, Atsushi
AU  - Hiraiwa A
AD  - Research Organization for Nano &Life Innovation, Waseda University, 513 
      Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20170220
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC5316979
COIS- The authors declare no competing financial interests.
EDAT- 2017/02/22 06:00
MHDA- 2017/02/22 06:01
PMCR- 2017/02/20
CRDT- 2017/02/21 06:00
PHST- 2016/08/04 00:00 [received]
PHST- 2017/01/10 00:00 [accepted]
PHST- 2017/02/21 06:00 [entrez]
PHST- 2017/02/22 06:00 [pubmed]
PHST- 2017/02/22 06:01 [medline]
PHST- 2017/02/20 00:00 [pmc-release]
AID - srep42368 [pii]
AID - 10.1038/srep42368 [doi]
PST - epublish
SO  - Sci Rep. 2017 Feb 20;7:42368. doi: 10.1038/srep42368.