PMID- 28252447
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180723
LR  - 20180723
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 28
IP  - 20
DP  - 2017 May 19
TI  - Influence of water vapor on the electronic property of MoS(2) field effect 
      transistors.
PG  - 204003
LID - 10.1088/1361-6528/aa642d [doi]
AB  - The influence of water vapor on the electronic property of MoS(2) field effect 
      transistors (FETs) is studied through controlled experiments. We fabricate 
      supported and suspended FETs on the same piece of MoS(2) to figure out the role 
      of SiO(2) substrate on the water sensing property of MoS(2). The two kinds of 
      devices show similar response to water vapor and to different treatments, such as 
      pumping in the vacuum, annealing at 500 K and current annealing, indicating the 
      substrate does not play an important role in the MoS(2) water sensor. Water 
      adsorption is found to decrease the carrier mobility probably through introducing 
      a scattering center on the surface of MoS(2). The threshold voltage and 
      subthreshold swing of the FETs do not change obviously after introducing water 
      vapor, indicating there is no obvious doping and trap introducing effects. Long 
      time pumping in a high vacuum and 500 K annealing show negligible effects on 
      removing the water adsorption on the devices. Current annealing at high 
      source-drain bias is found to be able to remove the water adsorption and set the 
      FETs to their initial states. The mechanism is proposed to be through the hot 
      carriers at high bias.
FAU - Shu, Jiapei
AU  - Shu J
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices, Department of 
      Electronics, Peking University, Beijing 100871, People's Republic of China. 
      Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 
      100871, People's Republic of China.
FAU - Wu, Gongtao
AU  - Wu G
FAU - Gao, Song
AU  - Gao S
FAU - Liu, Bo
AU  - Liu B
FAU - Wei, Xianlong
AU  - Wei X
FAU - Chen, Qing
AU  - Chen Q
LA  - eng
PT  - Journal Article
DEP - 20170302
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2017/03/03 06:00
MHDA- 2017/03/03 06:01
CRDT- 2017/03/03 06:00
PHST- 2017/03/03 06:00 [pubmed]
PHST- 2017/03/03 06:01 [medline]
PHST- 2017/03/03 06:00 [entrez]
AID - 10.1088/1361-6528/aa642d [doi]
PST - ppublish
SO  - Nanotechnology. 2017 May 19;28(20):204003. doi: 10.1088/1361-6528/aa642d. Epub 
      2017 Mar 2.