PMID- 28319363
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20181010
LR  - 20181010
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 11
IP  - 4
DP  - 2017 Apr 25
TI  - Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the 
      Conducting Filaments in a SiO(2) Layer.
PG  - 4097-4104
LID - 10.1021/acsnano.7b00783 [doi]
AB  - Conducting bridge random access memory (CBRAM) is one of the most promising 
      candidates for future nonvolatile memories. It is important to understand the 
      scalability and retention of CBRAM cells to realize better memory performance. 
      Here, we directly observe the switching dynamics of Cu tip/SiO(2)/W cells with 
      various active electrode sizes using in situ transmission electron microscopy. 
      Conducting filaments (CFs) grow from the active electrode (Cu tip) to inert 
      electrode (W) during the SET operations. The size of the Cu tip affects the 
      electric-field distribution, the amount of the cation injection into electrolyte, 
      and the dimension of the CF. This study provides helpful understanding on the 
      relationship between power consumption and retention of CBRAM cells. We also 
      construct a theoretical model to explain the electrode-size-dependent CF growth 
      in SET operations, showing good agreement with our experimental results.
FAU - Yuan, Fang
AU  - Yuan F
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
AD  - Department of Electrical Engineering and Stanford SystemX Alliance, Stanford 
      University , Stanford, California 94305, United States.
FAU - Zhang, Zhi
AU  - Zhang Z
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
FAU - Liu, Chunru
AU  - Liu C
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
FAU - Zhou, Feichi
AU  - Zhou F
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
FAU - Yau, Hei Man
AU  - Yau HM
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
FAU - Lu, Wei
AU  - Lu W
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
FAU - Qiu, Xiaoyan
AU  - Qiu X
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
FAU - Wong, H-S Philip
AU  - Wong HP
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
AD  - Department of Electrical Engineering and Stanford SystemX Alliance, Stanford 
      University , Stanford, California 94305, United States.
FAU - Dai, Jiyan
AU  - Dai J
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
FAU - Chai, Yang
AU  - Chai Y
AUID- ORCID: 0000-0002-8943-0861
AD  - Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, 
      Kowloon, Hong Kong, People's Republic of China.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20170322
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
OTO - NOTNLM
OT  - conducting bridge random access memory
OT  - conducting filament
OT  - in situ transmission electron microscopy
OT  - nonvolatile memory
OT  - resistive switching memory
EDAT- 2017/03/21 06:00
MHDA- 2017/03/21 06:01
CRDT- 2017/03/21 06:00
PHST- 2017/03/21 06:00 [pubmed]
PHST- 2017/03/21 06:01 [medline]
PHST- 2017/03/21 06:00 [entrez]
AID - 10.1021/acsnano.7b00783 [doi]
PST - ppublish
SO  - ACS Nano. 2017 Apr 25;11(4):4097-4104. doi: 10.1021/acsnano.7b00783. Epub 2017 
      Mar 22.