PMID- 28322554
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180725
LR  - 20180725
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 9
IP  - 14
DP  - 2017 Apr 12
TI  - Schottky Barriers in Bilayer Phosphorene Transistors.
PG  - 12694-12705
LID - 10.1021/acsami.6b16826 [doi]
AB  - It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 
      2D material field effect transistors (FETs) with strongly interacted electrode 
      from the work function approximation (WFA) because of existence of the 
      Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) 
      phosphorene FETs in contact with a series of metals with a wide work function 
      range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic 
      band calculations and quantum transport simulation (QTS). Different from only one 
      type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of 
      SBs are identified in BL phosphorene FETs: the vertical SB between the metallized 
      and the intact phosphorene layer, whose height is determined from the energy band 
      analysis (EBA); the lateral SB between the metallized and the channel BL 
      phosphorene, whose height is determined from the QTS. The vertical SBHs show a 
      better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS 
      compared than that of the popular WFA. Therefore, we develop a better and more 
      general method than the WFA to estimate the lateral SBHs of ML semiconductor 
      transistors with strongly interacted electrodes based on the EBA for its BL 
      counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed 
      between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 
      0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are 
      formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH 
      of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity 
      and SBHs are in good agreement with available experiments. Our study provides an 
      insight into the BL phosphorene-metal interfaces that are crucial for designing 
      the BL phosphorene device.
FAU - Pan, Yuanyuan
AU  - Pan Y
AUID- ORCID: 0000-0002-0654-3677
AD  - State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking 
      University , Beijing 100871, P. R. China.
FAU - Dan, Yang
AU  - Dan Y
AD  - State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking 
      University , Beijing 100871, P. R. China.
FAU - Wang, Yangyang
AU  - Wang Y
AUID- ORCID: 0000-0003-3992-3796
AD  - Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of 
      Space Technology, China Academy of Space Technology , Beijing 100094, P. R. 
      China.
FAU - Ye, Meng
AU  - Ye M
AD  - State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking 
      University , Beijing 100871, P. R. China.
FAU - Zhang, Han
AU  - Zhang H
AUID- ORCID: 0000-0002-1483-5899
AD  - State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking 
      University , Beijing 100871, P. R. China.
FAU - Quhe, Ruge
AU  - Quhe R
AUID- ORCID: 0000-0001-8991-8640
AD  - State Key Laboratory of Information Photonics and Optical Communications & School 
      of Science, Beijing University of Posts and Telecommunications , Beijing 100876, 
      P. R. China.
FAU - Zhang, Xiuying
AU  - Zhang X
AUID- ORCID: 0000-0002-7393-9567
AD  - State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking 
      University , Beijing 100871, P. R. China.
FAU - Li, Jingzhen
AU  - Li J
AD  - State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking 
      University , Beijing 100871, P. R. China.
FAU - Guo, Wanlin
AU  - Guo W
AD  - Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of 
      Education , Beijing 100876, P. R. China.
FAU - Yang, Li
AU  - Yang L
AD  - Department of Physics, Washington University in St. Louis , St. Louis, Missouri 
      63130, United States.
FAU - Lu, Jing
AU  - Lu J
AD  - State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking 
      University , Beijing 100871, P. R. China.
AD  - Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China.
LA  - eng
PT  - Journal Article
DEP - 20170330
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - Schottky barrier
OT  - bilayer phosphorene transistor
OT  - energy band
OT  - interface
OT  - quantum transport simulation
EDAT- 2017/03/23 06:00
MHDA- 2017/03/23 06:01
CRDT- 2017/03/22 06:00
PHST- 2017/03/23 06:00 [pubmed]
PHST- 2017/03/23 06:01 [medline]
PHST- 2017/03/22 06:00 [entrez]
AID - 10.1021/acsami.6b16826 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2017 Apr 12;9(14):12694-12705. doi: 
      10.1021/acsami.6b16826. Epub 2017 Mar 30.