PMID- 28429745
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 7
DP  - 2017 Apr 21
TI  - High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility 
      Transistor.
PG  - 46664
LID - 10.1038/srep46664 [doi]
LID - 46664
AB  - In this work, a high temperature THz detector based on a GaN high electron 
      mobility transistor (HEMT) with nano antenna structures was fabricated and 
      demonstrated to be able to work up to 200( ) degrees C. The THz responsivity and noise 
      equivalent power (NEP) of the device were characterized at 0.14 THz radiation 
      over a wide temperature range from room temperature to 200  degrees C. A high 
      responsivity R(v) of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz(0.5) 
      were obtained at room temperature and 200  degrees C, respectively. The advantages of the 
      GaN HEMT over other types of field effect transistors for high temperature 
      terahertz detection are discussed. The physical mechanisms responsible for the 
      temperature dependence of the responsivity and NEP of the GaN HEMT are also 
      analyzed thoroughly.
FAU - Hou, H W
AU  - Hou HW
AD  - Low-energy electronic system IRG, Singapore-MIT Alliance for Research and 
      Technology Center, 1 CREATE Way, 138602, Singapore.
AD  - Department of Electrical and Computer Engineering, National University of 
      Singapore, Block E4, Engineering Drive 3, 117583, Singapore.
FAU - Liu, Z
AU  - Liu Z
AD  - Low-energy electronic system IRG, Singapore-MIT Alliance for Research and 
      Technology Center, 1 CREATE Way, 138602, Singapore.
FAU - Teng, J H
AU  - Teng JH
AD  - Institute of Materials Research and Engineering, Agency for Science, Technology, 
      and Research (A*STAR), 2 Fusionopolis Way, Innovis, 138634, Singapore.
FAU - Palacios, T
AU  - Palacios T
AD  - Department of Electrical Engineering and Computer Science, Massachusetts 
      Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts, 
      02139, United States.
FAU - Chua, S J
AU  - Chua SJ
AD  - Low-energy electronic system IRG, Singapore-MIT Alliance for Research and 
      Technology Center, 1 CREATE Way, 138602, Singapore.
AD  - Department of Electrical and Computer Engineering, National University of 
      Singapore, Block E4, Engineering Drive 3, 117583, Singapore.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20170421
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC5399372
COIS- The authors declare no competing financial interests.
EDAT- 2017/04/22 06:00
MHDA- 2017/04/22 06:01
PMCR- 2017/04/21
CRDT- 2017/04/22 06:00
PHST- 2017/01/17 00:00 [received]
PHST- 2017/03/22 00:00 [accepted]
PHST- 2017/04/22 06:00 [entrez]
PHST- 2017/04/22 06:00 [pubmed]
PHST- 2017/04/22 06:01 [medline]
PHST- 2017/04/21 00:00 [pmc-release]
AID - srep46664 [pii]
AID - 10.1038/srep46664 [doi]
PST - epublish
SO  - Sci Rep. 2017 Apr 21;7:46664. doi: 10.1038/srep46664.