PMID- 28447680
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180720
LR  - 20180720
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 9
IP  - 18
DP  - 2017 May 11
TI  - Subthreshold swing improvement in MoS(2) transistors by the negative-capacitance 
      effect in a ferroelectric Al-doped-HfO(2)/HfO(2) gate dielectric stack.
PG  - 6122-6127
LID - 10.1039/c7nr00088j [doi]
AB  - Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec(-1) 
      by exploiting the negative-capacitance (NC) effect in ferroelectric (FE) 
      materials is a novel effective technique to allow the reduction of the supply 
      voltage and power consumption in field effect transistors (FETs). At the same 
      time, two-dimensional layered semiconductors, such as molybdenum disulfide 
      (MoS(2)), have been shown to be promising candidates to replace silicon MOSFETs 
      in sub-5 nm-channel technology nodes. In this paper, we demonstrate NC MoS(2) 
      FETs by incorporating a ferroelectric Al-doped HfO(2) (Al : HfO(2)), a 
      technologically compatible material, in the FET gate stack. Al : HfO(2) thin 
      films were deposited on Si wafers by atomic layer deposition. Voltage 
      amplification up to 1.25 times was observed in a FE bilayer stack of 
      Al : HfO(2)/HfO(2) with a Ni metallic intermediate layer. The minimum SS 
      (SS(min)) of the NC-MoS(2) FET built on the FE bilayer improved to 57 mV dec(-1) 
      at room temperature, compared with SS(min) = 67 mV dec(-1) for the MoS(2) FET 
      with only HfO(2) as a gate dielectric.
FAU - Nourbakhsh, Amirhasan
AU  - Nourbakhsh A
AD  - Department of Electrical Engineering and Computer Sciences, Massachusetts 
      Institute of Technology, Cambridge, Massachusetts 02139, USA. anour@mit.edu.
FAU - Zubair, Ahmad
AU  - Zubair A
FAU - Joglekar, Sameer
AU  - Joglekar S
FAU - Dresselhaus, Mildred
AU  - Dresselhaus M
FAU - Palacios, Tomas
AU  - Palacios T
LA  - eng
PT  - Journal Article
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2017/04/28 06:00
MHDA- 2017/04/28 06:01
CRDT- 2017/04/28 06:00
PHST- 2017/04/28 06:00 [pubmed]
PHST- 2017/04/28 06:01 [medline]
PHST- 2017/04/28 06:00 [entrez]
AID - 10.1039/c7nr00088j [doi]
PST - ppublish
SO  - Nanoscale. 2017 May 11;9(18):6122-6127. doi: 10.1039/c7nr00088j.