PMID- 28454481
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201001
IS  - 1931-7573 (Print)
IS  - 1556-276X (Electronic)
IS  - 1556-276X (Linking)
VI  - 12
IP  - 1
DP  - 2017 Dec
TI  - AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by 
      Plasma-Enhanced Atomic Layer Deposition.
PG  - 315
LID - 10.1186/s11671-017-2082-0 [doi]
LID - 315
AB  - We report a low current collapse GaN-based high electron mobility transistor 
      (HEMT) with an excellent thermal stability at 150  degrees C. The AlN was grown by 
      N(2)-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive 
      index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the 
      H(2)/NH(3) plasma pre-treatment led to remove the native gallium oxide. The X-ray 
      photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can 
      be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN 
      passivation, the surface traps can be eliminated and corresponding to a 22.1% of 
      current collapse with quiescent drain bias (V (DSQ)) at 40 V. Furthermore, the 
      high temperature measurement exhibited a shift-free threshold voltage (V (th)), 
      corresponding to a 40.2% of current collapse at 150  degrees C. The thermal stable HEMT 
      enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good 
      thermal reliability under high power operation.
FAU - Tzou, An-Jye
AU  - Tzou AJ
AD  - Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, 
      Taiwan. ajtzou@narlabs.org.tw.
AD  - National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, 
      Taiwan. ajtzou@narlabs.org.tw.
AD  - Department of Photonics and Institute of Electro-Optical Engineering, National 
      Chiao Tung University, Hsinchu, 30010, Taiwan. ajtzou@narlabs.org.tw.
AD  - NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, 
      Taiwan. ajtzou@narlabs.org.tw.
FAU - Chu, Kuo-Hsiung
AU  - Chu KH
AD  - Department of Photonics and Institute of Electro-Optical Engineering, National 
      Chiao Tung University, Hsinchu, 30010, Taiwan.
FAU - Lin, I-Feng
AU  - Lin IF
AD  - NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, 
      Taiwan.
AD  - International College of Semiconductor Technology, National Chiao Tung 
      University, Hsinchu, 30010, Taiwan.
FAU - Ostreng, Erik
AU  - Ostreng E
AD  - NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, 
      Taiwan.
FAU - Fang, Yung-Sheng
AU  - Fang YS
AD  - NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, 
      Taiwan.
FAU - Wu, Xiao-Peng
AU  - Wu XP
AD  - NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, 
      Taiwan.
FAU - Wu, Bo-Wei
AU  - Wu BW
AD  - National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, 
      Taiwan.
FAU - Shen, Chang-Hong
AU  - Shen CH
AD  - National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, 
      Taiwan.
FAU - Shieh, Jia-Ming
AU  - Shieh JM
AD  - National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, 
      Taiwan.
FAU - Yeh, Wen-Kuan
AU  - Yeh WK
AD  - National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, 
      Taiwan.
FAU - Chang, Chun-Yen
AU  - Chang CY
AD  - Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, 
      Taiwan.
AD  - Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 
      2, Nankang, Taipei, 11529, Taiwan.
FAU - Kuo, Hao-Chung
AU  - Kuo HC
AD  - National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu, 30078, 
      Taiwan.
AD  - Department of Photonics and Institute of Electro-Optical Engineering, National 
      Chiao Tung University, Hsinchu, 30010, Taiwan.
AD  - NCTU-Picosun Joint Laboratories, National Chiao Tung University, Hsinchu, 30010, 
      Taiwan.
LA  - eng
PT  - Journal Article
DEP - 20170427
PL  - United States
TA  - Nanoscale Res Lett
JT  - Nanoscale research letters
JID - 101279750
PMC - PMC5407397
OTO - NOTNLM
OT  - Atomic layer deposition (ALD)
OT  - Current collapse
OT  - GaN
OT  - High electron mobility transistor (HEMT)
OT  - Surface passivation
EDAT- 2017/04/30 06:00
MHDA- 2017/04/30 06:01
PMCR- 2017/04/27
CRDT- 2017/04/30 06:00
PHST- 2017/01/02 00:00 [received]
PHST- 2017/04/12 00:00 [accepted]
PHST- 2017/04/30 06:00 [entrez]
PHST- 2017/04/30 06:00 [pubmed]
PHST- 2017/04/30 06:01 [medline]
PHST- 2017/04/27 00:00 [pmc-release]
AID - 10.1186/s11671-017-2082-0 [pii]
AID - 2082 [pii]
AID - 10.1186/s11671-017-2082-0 [doi]
PST - ppublish
SO  - Nanoscale Res Lett. 2017 Dec;12(1):315. doi: 10.1186/s11671-017-2082-0. Epub 2017 
      Apr 27.