PMID- 28489103
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180202
LR  - 20180202
IS  - 1463-9084 (Electronic)
IS  - 1463-9076 (Linking)
VI  - 19
IP  - 20
DP  - 2017 May 24
TI  - Triethanolamine doped multilayer MoS(2) field effect transistors.
PG  - 13133-13139
LID - 10.1039/c7cp00589j [doi]
AB  - Chemical doping has been investigated as an alternative method of conventional 
      ion implantation for two-dimensional materials. We herein report chemically doped 
      multilayer molybdenum disulfide (MoS(2)) field effect transistors (FETs) through 
      n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type 
      dopant. As a result of the TEOA doping process, the electrical performances of 
      multilayer MoS(2) FETs were enhanced at room temperature. Extracted field effect 
      mobility was estimated to be  approximately 30 cm(2) V(-1) s(-1) after the surface doping 
      process, which is 10 times higher than that of the pristine device. Subthreshold 
      swing and contact resistance were also improved after the TEOA doping process. 
      The enhancement of the subthreshold swing was demonstrated by using an 
      independent FET model. Furthermore, we found that the doping level can be 
      effectively controlled by the heat treatment method. These results demonstrate a 
      promising material system that is easily controlled with high performance, while 
      elucidating the underlying mechanism of improved electrical properties by the 
      doping effect in a multilayered scheme.
FAU - Ryu, Min-Yeul
AU  - Ryu MY
AD  - School of Electrical Engineering, Korea University, Seoul 02481, South Korea. 
      gtkim@korea.ac.kr.
FAU - Jang, Ho-Kyun
AU  - Jang HK
FAU - Lee, Kook Jin
AU  - Lee KJ
FAU - Piao, Mingxing
AU  - Piao M
FAU - Ko, Seung-Pil
AU  - Ko SP
FAU - Shin, Minju
AU  - Shin M
FAU - Huh, Junghwan
AU  - Huh J
FAU - Kim, Gyu-Tae
AU  - Kim GT
LA  - eng
PT  - Journal Article
PL  - England
TA  - Phys Chem Chem Phys
JT  - Physical chemistry chemical physics : PCCP
JID - 100888160
EDAT- 2017/05/11 06:00
MHDA- 2017/05/11 06:01
CRDT- 2017/05/11 06:00
PHST- 2017/05/11 06:00 [pubmed]
PHST- 2017/05/11 06:01 [medline]
PHST- 2017/05/11 06:00 [entrez]
AID - 10.1039/c7cp00589j [doi]
PST - ppublish
SO  - Phys Chem Chem Phys. 2017 May 24;19(20):13133-13139. doi: 10.1039/c7cp00589j.