PMID- 28743988
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20190125
LR  - 20190125
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 7
IP  - 1
DP  - 2017 Jul 25
TI  - Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
PG  - 6360
LID - 10.1038/s41598-017-06957-8 [doi]
LID - 6360
AB  - Single crystal semiconductor nanomembranes (NM) are important in various 
      applications such as heterogeneous integration and flexible devices. This paper 
      reports the fabrication of AlGaN/GaN NMs and NM high electron mobility 
      transistors (HEMT). Electrochemical etching is used to slice off 
      single-crystalline AlGaN/GaN layers while preserving their microstructural 
      quality. A double heterostructure design with a symmetric strain profile is 
      employed to ensure minimal residual strain in freestanding NMs after release. The 
      mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN 
      heterostructure, is noticeably superior to previously reported values of many 
      other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO(2) and flexible 
      polymeric substrates. Excellent electrical characteristics, including a high 
      ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are 
      capable of supporting high performance applications.
FAU - Chang, Tzu-Hsuan
AU  - Chang TH
AD  - Department of Electrical and Computer Engineering, University of 
      Wisconsin-Madison, Madison, 53706, United States.
FAU - Xiong, Kanglin
AU  - Xiong K
AD  - Department of Electrical Engineering, Yale University, New Haven, 06511, United 
      States. kanglin.xiong@yale.edu.
FAU - Park, Sung Hyun
AU  - Park SH
AD  - Department of Electrical Engineering, Yale University, New Haven, 06511, United 
      States.
FAU - Yuan, Ge
AU  - Yuan G
AD  - Department of Electrical Engineering, Yale University, New Haven, 06511, United 
      States.
FAU - Ma, Zhenqiang
AU  - Ma Z
AD  - Department of Electrical and Computer Engineering, University of 
      Wisconsin-Madison, Madison, 53706, United States.
FAU - Han, Jung
AU  - Han J
AD  - Department of Electrical Engineering, Yale University, New Haven, 06511, United 
      States.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20170725
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC5527108
COIS- The authors declare that they have no competing interests.
EDAT- 2017/07/27 06:00
MHDA- 2017/07/27 06:01
PMCR- 2017/07/25
CRDT- 2017/07/27 06:00
PHST- 2017/05/24 00:00 [received]
PHST- 2017/06/19 00:00 [accepted]
PHST- 2017/07/27 06:00 [entrez]
PHST- 2017/07/27 06:00 [pubmed]
PHST- 2017/07/27 06:01 [medline]
PHST- 2017/07/25 00:00 [pmc-release]
AID - 10.1038/s41598-017-06957-8 [pii]
AID - 6957 [pii]
AID - 10.1038/s41598-017-06957-8 [doi]
PST - epublish
SO  - Sci Rep. 2017 Jul 25;7(1):6360. doi: 10.1038/s41598-017-06957-8.