PMID- 28773366
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201001
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 9
IP  - 4
DP  - 2016 Mar 29
TI  - Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe(2) Film 
      during Selenization in Se+SnSe Vapor.
LID - 10.3390/ma9040241 [doi]
LID - 241
AB  - The preparation of Cu(2)ZnSnSe(4) (CZTSe) thin films by the selenization of an 
      electrodeposited copper-tin-zinc (CuSnZn) precursor with various Sn contents in 
      low-pressure Se+SnSe(x) vapor was studied. Scanning electron microscope (SEM) and 
      energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of 
      the precursor that is used in selenization in a low-pressure Se+SnSe(x) vapor 
      atmosphere only slightly affects the elemental composition of the formed CZTSe 
      films. However, the Sn content of the precursor significantly affects the grain 
      size and surface morphology of CZTSe films. A metal precursor with a very Sn-poor 
      composition produces CZTSe films with large grains and a rough surface, while a 
      metal precursor with a very Sn-rich composition procures CZTSe films with small 
      grains and a compact surface. X-ray diffraction (XRD) and SEM revealed that the 
      metal precursor with a Sn-rich composition can grow a thicker MoSe(2) thin film at 
      CZTSe/Mo interface than one with a Sn-poor composition, possibly because excess 
      Sn in the precursor may catalyze the formation of MoSe(2) thin film. A CZTSe solar 
      cell with an efficiency of 7.94%was realized by using an electrodeposited metal 
      precursor with a Sn/Cu ratio of 0.5 in selenization in a low-pressure Se+SnSe(x) 
      vapor.
FAU - Yao, Liyong
AU  - Yao L
AD  - Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key 
      Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 
      300071, China. yaoliyong@yeah.net.
FAU - Ao, Jianping
AU  - Ao J
AD  - Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key 
      Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 
      300071, China. aojp@nankai.edu.cn.
FAU - Jeng, Ming-Jer
AU  - Jeng MJ
AD  - Department of Electronic Engineering, Chang Gung University, Taoyuan City 33302, 
      Taiwan. mjjeng@mail.cgu.edu.tw.
FAU - Bi, Jinlian
AU  - Bi J
AD  - Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key 
      Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 
      300071, China. bijinlian815@126.com.
FAU - Gao, Shoushuai
AU  - Gao S
AD  - Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key 
      Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 
      300071, China. gaoshoushuai@yeah.net.
FAU - Sun, Guozhong
AU  - Sun G
AD  - Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key 
      Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 
      300071, China. taigic@nankai.edu.cn.
FAU - He, Qing
AU  - He Q
AD  - Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key 
      Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 
      300071, China. Heqing27@nankai.edu.cn.
FAU - Zhou, Zhiqiang
AU  - Zhou Z
AD  - Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key 
      Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 
      300071, China. zhqzhou@126.com.
FAU - Sun, Yun
AU  - Sun Y
AD  - Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key 
      Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 
      300071, China. suny@nankai.edu.cn.
FAU - Chang, Liann-Be
AU  - Chang LB
AD  - Department of Electronic Engineering, Chang Gung University, Taoyuan City 33302, 
      Taiwan. liann@mail.cgu.edu.tw.
LA  - eng
PT  - Journal Article
DEP - 20160329
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC5502893
OTO - NOTNLM
OT  - Cu2ZnSnSe4 solar cells
OT  - MoSe2
OT  - Se+SnSex vapor
OT  - electrodeposited CuSnZn precursor
OT  - selenization
COIS- The authors declare no conflict of interest.
EDAT- 2016/03/29 00:00
MHDA- 2016/03/29 00:01
PMCR- 2016/03/29
CRDT- 2017/08/05 06:00
PHST- 2016/01/14 00:00 [received]
PHST- 2016/02/25 00:00 [revised]
PHST- 2016/03/22 00:00 [accepted]
PHST- 2017/08/05 06:00 [entrez]
PHST- 2016/03/29 00:00 [pubmed]
PHST- 2016/03/29 00:01 [medline]
PHST- 2016/03/29 00:00 [pmc-release]
AID - ma9040241 [pii]
AID - materials-09-00241 [pii]
AID - 10.3390/ma9040241 [doi]
PST - epublish
SO  - Materials (Basel). 2016 Mar 29;9(4):241. doi: 10.3390/ma9040241.