PMID- 28834243
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 1613-6829 (Electronic)
IS  - 1613-6810 (Linking)
VI  - 13
IP  - 39
DP  - 2017 Oct
TI  - A Novel and Facile Route to Synthesize Atomic-Layered MoS(2) Film for Large-Area 
      Electronics.
LID - 10.1002/smll.201701306 [doi]
AB  - High-quality and large-area molybdenum disulfide (MoS(2) ) thin film is highly 
      desirable for applications in large-area electronics. However, there remains a 
      challenge in attaining MoS(2) film of reasonable crystallinity due to the absence 
      of appropriate choice and control of precursors, as well as choice of suitable 
      growth substrates. Herein, a novel and facile route is reported for synthesizing 
      few-layered MoS(2) film with new precursors via chemical vapor deposition. Prior 
      to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is 
      spun onto the growth substrate and dimethyl disulfide as the liquid sulfur 
      precursor is supplied with a bubbling system during growth. To supplement the 
      limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by 
      dissolving molybdenum hexacarbonyl (Mo(CO)(6) ) in the liquid sulfur precursor 
      delivered by the bubbler. By precisely controlling the amounts of precursors and 
      hydrogen flow, full coverage of MoS(2) film is readily achievable in 20 min. 
      Large-area MoS(2) field effect transistors (FETs) fabricated with a conventional 
      photolithography have a carrier mobility as high as 18.9 cm(2) V(-1) s(-1) , 
      which is the highest reported for bottom-gated MoS(2) -FETs fabricated via 
      photolithography with an on/off ratio of  approximately 10(5) at room temperature.
CI  - (c) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
FAU - Boandoh, Stephen
AU  - Boandoh S
AUID- ORCID: 0000-0003-3245-5184
AD  - Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul, 
      04620, Republic of Korea.
FAU - Choi, Soo Ho
AU  - Choi SH
AD  - Department of Physics, Dongguk University-Seoul, Seoul, 04620, Republic of Korea.
FAU - Park, Ji-Hoon
AU  - Park JH
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      Suwon, 16419, Republic of Korea.
AD  - Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
FAU - Park, So Young
AU  - Park SY
AD  - Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul, 
      04620, Republic of Korea.
FAU - Bang, Seungho
AU  - Bang S
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      Suwon, 16419, Republic of Korea.
AD  - Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of 
      Korea.
FAU - Jeong, Mun Seok
AU  - Jeong MS
AD  - Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), 
      Suwon, 16419, Republic of Korea.
AD  - Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of 
      Korea.
FAU - Lee, Joo Song
AU  - Lee JS
AD  - Institute of Advanced Composite Materials, Korea Institute of Science and 
      Technology (KIST), San101 Eunha-Ri, Bongdong-Eup, Wanju-Gun, Jeollabuk-Do, 
      565-902, Republic of Korea.
FAU - Kim, Hyeong Jin
AU  - Kim HJ
AD  - Institute of Advanced Composite Materials, Korea Institute of Science and 
      Technology (KIST), San101 Eunha-Ri, Bongdong-Eup, Wanju-Gun, Jeollabuk-Do, 
      565-902, Republic of Korea.
FAU - Yang, Woochul
AU  - Yang W
AD  - Department of Physics, Dongguk University-Seoul, Seoul, 04620, Republic of Korea.
FAU - Choi, Jae-Young
AU  - Choi JY
AD  - School of Advanced Materials Science & Engineering, Sungkyunkwan University 
      (SKKU), Suwon, 16419, Republic of Korea.
FAU - Kim, Soo Min
AU  - Kim SM
AD  - Institute of Advanced Composite Materials, Korea Institute of Science and 
      Technology (KIST), San101 Eunha-Ri, Bongdong-Eup, Wanju-Gun, Jeollabuk-Do, 
      565-902, Republic of Korea.
FAU - Kim, Ki Kang
AU  - Kim KK
AUID- ORCID: 0000-0003-1008-6744
AD  - Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul, 
      04620, Republic of Korea.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20170822
PL  - Germany
TA  - Small
JT  - Small (Weinheim an der Bergstrasse, Germany)
JID - 101235338
OTO - NOTNLM
OT  - MoS2
OT  - chemical vapor deposition
OT  - growth mechanism
OT  - photoluminescence
OT  - precursors
EDAT- 2017/08/24 06:00
MHDA- 2017/08/24 06:01
CRDT- 2017/08/24 06:00
PHST- 2017/04/24 00:00 [received]
PHST- 2017/07/06 00:00 [revised]
PHST- 2017/08/24 06:00 [pubmed]
PHST- 2017/08/24 06:01 [medline]
PHST- 2017/08/24 06:00 [entrez]
AID - 10.1002/smll.201701306 [doi]
PST - ppublish
SO  - Small. 2017 Oct;13(39). doi: 10.1002/smll.201701306. Epub 2017 Aug 22.