PMID- 28837042 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20180723 LR - 20180723 IS - 1361-6528 (Electronic) IS - 0957-4484 (Linking) VI - 28 IP - 43 DP - 2017 Oct 27 TI - High mobility 2-dimensional electron gas at LaAlO(3)/SrTiO(3) interface prepared by spin coating chemical methods. PG - 435701 LID - 10.1088/1361-6528/aa8842 [doi] AB - Highly mobile 2-dimensional electron gases (2DEGs) at the (001), (011) and (111)-oriented LaAlO(3)/SrTiO(3) (LAO/STO) interfaces are obtained using spin coating chemical method, which is a gentle technique without plasma bombardment of the pulsed laser deposition. As revealed by x-ray diffraction spectrum and x-ray reflectivity analysis, the LAO over layer is epitaxially grown, and has a uniform thickness of approximately 15 nm, approximately 20 nm and approximately 26 nm for (001), (011) and (111) orientations, respectively. The interfaces are well metallic down to 2 K. The carrier mobilities are approximately 28 000 cm(2) V(-1) s(-1), approximately 22 000 cm(2) V(-1) s(-1) and approximately 8300 cm(2) V(-1) s(-1) at 2 K for the (001), (011) and (111) LAO/STO interfaces, respectively, and approximately 8 cm(2) V(-1) s(-1), approximately 4 cm(2) V(-1) s(-1) and approximately 4 cm(2) V(-1) s(-1) at room temperature. The present work shows that the spin coating chemical method is a feasible approach to get high quality 2DEG at both the polar/non-polar and polar/polar interfaces. FAU - Khan, Tahira AU - Khan T AD - Beijing National Laboratory for Condensed Matter and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China. School of Physical Sciences, University of Chinese Academy of Sciences, People's Republic of China. FAU - Zhang, Hui AU - Zhang H FAU - Zhang, Hongrui AU - Zhang H FAU - Yan, Xi AU - Yan X FAU - Hong, Deshun AU - Hong D FAU - Han, Furong AU - Han F FAU - Chen, Yuansha AU - Chen Y FAU - Shen, Baogen AU - Shen B FAU - Sun, Jirong AU - Sun J LA - eng PT - Journal Article DEP - 20170824 PL - England TA - Nanotechnology JT - Nanotechnology JID - 101241272 EDAT- 2017/08/25 06:00 MHDA- 2017/08/25 06:01 CRDT- 2017/08/25 06:00 PHST- 2017/08/25 06:00 [pubmed] PHST- 2017/08/25 06:01 [medline] PHST- 2017/08/25 06:00 [entrez] AID - 10.1088/1361-6528/aa8842 [doi] PST - ppublish SO - Nanotechnology. 2017 Oct 27;28(43):435701. doi: 10.1088/1361-6528/aa8842. Epub 2017 Aug 24.