PMID- 28957048
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180205
LR  - 20181023
IS  - 1539-4794 (Electronic)
IS  - 0146-9592 (Linking)
VI  - 42
IP  - 17
DP  - 2017 Sep 1
TI  - Facile fabrication of flexible graphene FETs by sunlight reduction of graphene 
      oxide.
PG  - 3403-3406
LID - 10.1364/OL.42.003403 [doi]
AB  - We reported here a facile fabrication of flexible graphene-based field effect 
      transistors (FETs) by sunlight reduction of graphene oxide (GO) as channel 
      material. As a mask-free and chemical-free method, sunlight photoreduction of GO 
      without the use of any complex equipments is simple and green. The resultant FET 
      demonstrated excellent electrical properties (e.g., an optimized I(on)/I(off) 
      ratio of 111, hole mobility of 0.17  cm(2)  V(-1) s(-1)), revealing great 
      potential for development of flexible microelectrics. Additionally, since the 
      reduced GO channel could be fabricated by sunlight treatment between two 
      pre-patterned electrodes, the process features post-fabrication capability, which 
      makes it possible to integrate graphene-based devices with given device 
      structures.
FAU - Ma, Jia-Nan
AU  - Ma JN
FAU - He, Yan
AU  - He Y
FAU - Liu, Yan
AU  - Liu Y
FAU - Han, Dong-Dong
AU  - Han DD
FAU - Liu, Yu-Qing
AU  - Liu YQ
FAU - Mao, Jiang-Wei
AU  - Mao JW
FAU - Jiang, Hao-Bo
AU  - Jiang HB
FAU - Zhang, Yong-Lai
AU  - Zhang YL
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Opt Lett
JT  - Optics letters
JID - 7708433
EDAT- 2017/09/29 06:00
MHDA- 2017/09/29 06:01
CRDT- 2017/09/29 06:00
PHST- 2017/09/29 06:00 [entrez]
PHST- 2017/09/29 06:00 [pubmed]
PHST- 2017/09/29 06:01 [medline]
AID - 371007 [pii]
AID - 10.1364/OL.42.003403 [doi]
PST - ppublish
SO  - Opt Lett. 2017 Sep 1;42(17):3403-3406. doi: 10.1364/OL.42.003403.