PMID- 28994396
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180723
LR  - 20180723
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 28
IP  - 47
DP  - 2017 Nov 24
TI  - Analysis of noise generation and electric conduction at grain boundaries in 
      CVD-grown MoS(2) field effect transistors.
PG  - 47LT01
LID - 10.1088/1361-6528/aa9236 [doi]
AB  - Grain boundaries in a chemical vapour deposition (CVD)-grown monolayer of MoS(2) 
      induce significant effects on the electrical and low frequency noise 
      characteristics of the MoS(2). Here, we investigated the electrical properties 
      and noise characteristics of MoS(2) field effect transistors (FETs) made with 
      CVD-grown monolayer MoS(2). The electrical and noise characteristics of MoS(2) 
      FETs were analysed and compared for the MoS(2) channel layers with and without 
      grain boundaries. The grain boundary in the CVD-grown MoS(2) FETs can be the 
      dominant noise source, and dependence of the extracted Hooge parameters on the 
      gate voltage indicated the domination of the correlated number-mobility 
      fluctuation at the grain boundaries. The percolative noise characteristics of the 
      single grain regions of MoS(2) were concealed by the noise generated at the grain 
      boundary. This study can enhance understanding of the electrical transport 
      hindrance and significant noise generation by trapped charges at grain boundaries 
      of the CVD-grown MoS(2) devices.
FAU - Kim, Jae-Keun
AU  - Kim JK
FAU - Song, Younggul
AU  - Song Y
FAU - Kim, Tae-Young
AU  - Kim TY
FAU - Cho, Kyungjune
AU  - Cho K
FAU - Pak, Jinsu
AU  - Pak J
FAU - Choi, Barbara Yuri
AU  - Choi BY
FAU - Shin, Jiwon
AU  - Shin J
FAU - Chung, Seungjun
AU  - Chung S
FAU - Lee, Takhee
AU  - Lee T
LA  - eng
PT  - Journal Article
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2017/10/11 06:00
MHDA- 2017/10/11 06:01
CRDT- 2017/10/11 06:00
PHST- 2017/10/11 06:00 [pubmed]
PHST- 2017/10/11 06:01 [medline]
PHST- 2017/10/11 06:00 [entrez]
AID - 10.1088/1361-6528/aa9236 [doi]
PST - ppublish
SO  - Nanotechnology. 2017 Nov 24;28(47):47LT01. doi: 10.1088/1361-6528/aa9236.