PMID- 29039359
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20190319
LR  - 20200306
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 28
IP  - 45
DP  - 2017 Nov 10
TI  - Piezotronic effect tuned AlGaN/GaN high electron mobility transistor.
PG  - 455203
LID - 10.1088/1361-6528/aa8a5a [doi]
AB  - The piezotronic effect utilizes strain-induced piezoelectric polarization charges 
      to tune the carrier transportation across the interface/junction. We fabricated a 
      high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the 
      transport property was proven to be enhanced by applying an external stress for 
      the first time. The enhanced source-drain current was also observed at any gate 
      voltage and the maximum enhancement of the saturation current was up to 21% with 
      15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical 
      mechanism of HEMT with/without external compressive stress conditions was 
      carefully illustrated and further confirmed by a self-consistent solution of the 
      Schrodinger-Poisson equations. This study proves the cause-and-effect 
      relationship between the piezoelectric polarization effect and 2D electron gas 
      formation, which provides a tunable solution to enhance the device performance. 
      The strain tuned HEMT has potential applications in human-machine interface and 
      the security control of the power system.
FAU - Jiang, Chunyan
AU  - Jiang C
AD  - Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; 
      National Center for Nanoscience and Technology (NCNST), Beijing 100083, People's 
      Republic of China.
FAU - Liu, Ting
AU  - Liu T
FAU - Du, Chunhua
AU  - Du C
FAU - Huang, Xin
AU  - Huang X
FAU - Liu, Mengmeng
AU  - Liu M
FAU - Zhao, Zhenfu
AU  - Zhao Z
FAU - Li, Linxuan
AU  - Li L
FAU - Pu, Xiong
AU  - Pu X
FAU - Zhai, Junyi
AU  - Zhai J
FAU - Hu, Weiguo
AU  - Hu W
FAU - Lin Wang, Zhong
AU  - Lin Wang Z
LA  - eng
PT  - Journal Article
DEP - 20171017
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2017/10/19 06:00
MHDA- 2017/10/19 06:01
CRDT- 2017/10/18 06:00
PHST- 2017/10/18 06:00 [entrez]
PHST- 2017/10/19 06:00 [pubmed]
PHST- 2017/10/19 06:01 [medline]
AID - 10.1088/1361-6528/aa8a5a [doi]
PST - ppublish
SO  - Nanotechnology. 2017 Nov 10;28(45):455203. doi: 10.1088/1361-6528/aa8a5a. Epub 
      2017 Oct 17.