PMID- 29094392
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180718
LR  - 20200930
IS  - 1521-4095 (Electronic)
IS  - 0935-9648 (Linking)
VI  - 29
IP  - 47
DP  - 2017 Dec
TI  - Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency 
      Devices.
LID - 10.1002/adma.201701838 [doi]
AB  - Flexible gallium nitride (GaN) thin films can enable future strainable and 
      conformal devices for transmission of radio-frequency (RF) signals over large 
      distances for more efficient wireless communication. For the first time, 
      strainable high-frequency RF GaN devices are demonstrated, whose exceptional 
      performance is enabled by epitaxial growth on 2D boron nitride for chemical-free 
      transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures 
      transferred to flexible substrates are uniaxially strained up to 0.85% and reveal 
      near state-of-the-art values for electrical performance, with electron mobility 
      exceeding 2000 cm(2) V(-1) s(-1) and sheet carrier density above 1.07 x 10(13) 
      cm(-2) . The influence of strain on the RF performance of flexible GaN 
      high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating 
      cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 
      GHz, respectively, at up to 0.43% strain, representing a significant advancement 
      toward conformal, highly integrated electronic materials for RF applications.
CI  - (c) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
FAU - Glavin, Nicholas R
AU  - Glavin NR
AD  - Air Force Research Laboratory, Materials and Manufacturing Directorate, 
      Wright-Patterson AFB, OH, 45433, USA.
FAU - Chabak, Kelson D
AU  - Chabak KD
AD  - Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 
      45433, USA.
FAU - Heller, Eric R
AU  - Heller ER
AD  - Air Force Research Laboratory, Materials and Manufacturing Directorate, 
      Wright-Patterson AFB, OH, 45433, USA.
FAU - Moore, Elizabeth A
AU  - Moore EA
AD  - Air Force Research Laboratory, Materials and Manufacturing Directorate, 
      Wright-Patterson AFB, OH, 45433, USA.
AD  - KBRwyle, Dayton, OH, 45431, USA.
FAU - Prusnick, Timothy A
AU  - Prusnick TA
AD  - Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 
      45433, USA.
AD  - KBRwyle, Dayton, OH, 45431, USA.
FAU - Maruyama, Benji
AU  - Maruyama B
AD  - Air Force Research Laboratory, Materials and Manufacturing Directorate, 
      Wright-Patterson AFB, OH, 45433, USA.
FAU - Walker, Dennis E Jr
AU  - Walker DE Jr
AD  - Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 
      45433, USA.
FAU - Dorsey, Donald L
AU  - Dorsey DL
AD  - Air Force Research Laboratory, Materials and Manufacturing Directorate, 
      Wright-Patterson AFB, OH, 45433, USA.
FAU - Paduano, Qing
AU  - Paduano Q
AD  - Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 
      45433, USA.
FAU - Snure, Michael
AU  - Snure M
AD  - Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, 
      45433, USA.
LA  - eng
PT  - Journal Article
DEP - 20171102
PL  - Germany
TA  - Adv Mater
JT  - Advanced materials (Deerfield Beach, Fla.)
JID - 9885358
OTO - NOTNLM
OT  - flexible GaN
OT  - flexible RF electronics
OT  - gallium nitride
EDAT- 2017/11/03 06:00
MHDA- 2017/11/03 06:01
CRDT- 2017/11/03 06:00
PHST- 2017/04/03 00:00 [received]
PHST- 2017/07/28 00:00 [revised]
PHST- 2017/11/03 06:00 [pubmed]
PHST- 2017/11/03 06:01 [medline]
PHST- 2017/11/03 06:00 [entrez]
AID - 10.1002/adma.201701838 [doi]
PST - ppublish
SO  - Adv Mater. 2017 Dec;29(47). doi: 10.1002/adma.201701838. Epub 2017 Nov 2.