PMID- 29094597
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180731
LR  - 20180731
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 10
IP  - 1
DP  - 2018 Jan 10
TI  - Characterization of Low-Frequency Excess Noise in CH(3)NH(3)PbI(3)-Based Solar 
      Cells Grown by Solution and Hybrid Chemical Vapor Deposition Techniques.
PG  - 371-380
LID - 10.1021/acsami.7b10091 [doi]
AB  - In this study, detailed investigations of low-frequency noise (LFN) 
      characteristics of hybrid chemical vapor deposition (HCVD)- and solution-grown 
      CH(3)NH(3)PbI(3) (MAPI) solar cells are reported. It has been shown that LFN is a 
      ubiquitous phenomenon observed in all semiconductor devices. It is the smallest 
      signal that can be measured from the device; hence, systematic characterization 
      of the LFN properties can be utilized as a highly sensitive nondestructive tool 
      for the characterization of material defects in the device. It has been 
      demonstrated that the noise power spectral densities of the devices are 
      critically dependent on the parameters of the fabrication process, including the 
      growth ambient of the perovskite layer and the incorporation of the mesoscopic 
      structures in the devices. Our experimental results indicated that the LFN arises 
      from a thermally activated trapping and detrapping process, resulting in the 
      corresponding fluctuations in the conductance of the device. The results show 
      that the presence of oxygen in the growth ambient of the HCVD process and the 
      inclusion of an mp-TiO(2) layer in the device structure are two important factors 
      contributing to the substantial reduction in the density of the localized states 
      in the MAPI devices. Furthermore, the lifetimes of the MAPI perovskite-based 
      solar cells are strongly dependent on the material defect concentration. The 
      degradation process is substantially more rapid for the devices with higher 
      initial defect density compared to the devices prepared under optimized 
      conditions and structure that exhibit substantially lower initial trap density.
FAU - Shen, Qian
AU  - Shen Q
AD  - Department of Electronic and Information Engineering, The Hong Kong Polytechnic 
      University , Kowloon, Hong Kong SAR.
FAU - Ng, Annie
AU  - Ng A
AD  - Department of Electronic and Information Engineering, The Hong Kong Polytechnic 
      University , Kowloon, Hong Kong SAR.
FAU - Ren, Zhiwei
AU  - Ren Z
AD  - Department of Electronic and Information Engineering, The Hong Kong Polytechnic 
      University , Kowloon, Hong Kong SAR.
FAU - Gokkaya, Huseyin Cem
AU  - Gokkaya HC
AD  - Department of Electronic and Information Engineering, The Hong Kong Polytechnic 
      University , Kowloon, Hong Kong SAR.
FAU - Djurisic, Aleksandra B
AU  - Djurisic AB
AUID- ORCID: 0000-0002-5183-1467
AD  - Department of Physics, The University of Hong Kong , Pokfulam, Hong Kong Island, 
      Hong Kong SAR.
FAU - Zapien, Juan Antonio
AU  - Zapien JA
AD  - Department of Physics and Materials Science, City University of Hong Kong , 
      Kowloon, Hong Kong SAR.
FAU - Surya, Charles
AU  - Surya C
AUID- ORCID: 0000-0002-2990-7402
AD  - Department of Electronic and Information Engineering, The Hong Kong Polytechnic 
      University , Kowloon, Hong Kong SAR.
AD  - School of Engineering, Nazarbayev University , 53 Kabanbay Batyr Avenue, Astana 
      010000, Kazakhstan.
LA  - eng
PT  - Journal Article
DEP - 20171218
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - chemical vapor deposition
OT  - defect passivation
OT  - low-frequency noise
OT  - perovskite solar cells
OT  - stability
EDAT- 2017/11/03 06:00
MHDA- 2017/11/03 06:01
CRDT- 2017/11/03 06:00
PHST- 2017/11/03 06:00 [pubmed]
PHST- 2017/11/03 06:01 [medline]
PHST- 2017/11/03 06:00 [entrez]
AID - 10.1021/acsami.7b10091 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2018 Jan 10;10(1):371-380. doi: 
      10.1021/acsami.7b10091. Epub 2017 Dec 18.