PMID- 29111660
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180724
LR  - 20180724
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 9
IP  - 47
DP  - 2017 Nov 29
TI  - a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High 
      Electron Mobility Transistors.
PG  - 41435-41442
LID - 10.1021/acsami.7b12986 [doi]
AB  - Micro/nanowire-based devices have been envisioned as a promising new route toward 
      improved electronic and optoelectronic applications, which attracts considerable 
      research interests. However, suffering from applicable strategies to synthesize 
      uniform core-shell structures to meet the requirement for the investigations of 
      electrical transport behaviors along the length direction or high electron 
      mobility transistor (HEMT) devices, heterojunction wire-based electronics have 
      been explored limitedly. In the present work, GaN/AlN/AlGaN core-shell 
      heterojunction microwires on patterned Si substrates were synthesized without any 
      catalyst via metalorganic chemical vapor deposition. The as-synthesized 
      microwires had low dislocation, sharp, and uniform heterojunction interfaces. 
      Electrical transport performances were evaluated by fabricating HEMTs on the 
      heterojunction microwire channels. Results demonstrated that a normally off 
      operation was achieved with a threshold voltage of 1.4 V, a high on/off current 
      ratio of 10(8), a transconductance of 165 mS/mm, and a low subthreshold swing of 
      81 mV/dec. The normally off operation may attribute to the weak polarization 
      along semipolar facets of the heterojunction, which leads to weak constrain of 
      2DEG.
FAU - Song, Weidong
AU  - Song W
AD  - Guangdong Engineering Research Center of Optoelectronic Functional Materials and 
      Devices, South China Normal University , Guangzhou 510631, P. R. China.
FAU - Wang, Rupeng
AU  - Wang R
AD  - Guangdong Engineering Research Center of Optoelectronic Functional Materials and 
      Devices, South China Normal University , Guangzhou 510631, P. R. China.
FAU - Wang, Xingfu
AU  - Wang X
AD  - Guangdong Engineering Research Center of Optoelectronic Functional Materials and 
      Devices, South China Normal University , Guangzhou 510631, P. R. China.
FAU - Guo, Dexiao
AU  - Guo D
AD  - Guangdong Engineering Research Center of Optoelectronic Functional Materials and 
      Devices, South China Normal University , Guangzhou 510631, P. R. China.
FAU - Chen, Hang
AU  - Chen H
AD  - Guangdong Engineering Research Center of Optoelectronic Functional Materials and 
      Devices, South China Normal University , Guangzhou 510631, P. R. China.
FAU - Zhu, Yuntao
AU  - Zhu Y
AD  - Guangdong Engineering Research Center of Optoelectronic Functional Materials and 
      Devices, South China Normal University , Guangzhou 510631, P. R. China.
FAU - Liu, Liu
AU  - Liu L
AD  - Guangdong Engineering Research Center of Optoelectronic Functional Materials and 
      Devices, South China Normal University , Guangzhou 510631, P. R. China.
FAU - Zhou, Yu
AU  - Zhou Y
AD  - Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and 
      Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, P. R. China.
FAU - Sun, Qian
AU  - Sun Q
AD  - Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and 
      Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, P. R. China.
FAU - Wang, Li
AU  - Wang L
AD  - School of Materials Science and Engineering, Nanchang University , Nanchang 
      330031, P. R. China.
FAU - Li, Shuti
AU  - Li S
AUID- ORCID: 0000-0002-8871-1741
AD  - Guangdong Engineering Research Center of Optoelectronic Functional Materials and 
      Devices, South China Normal University , Guangzhou 510631, P. R. China.
LA  - eng
PT  - Journal Article
DEP - 20171115
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - GaN microwire
OT  - GaN/AlN/AlGaN
OT  - HEMT
OT  - electron gas
OT  - heterojunction
OT  - normally off
EDAT- 2017/11/08 06:00
MHDA- 2017/11/08 06:01
CRDT- 2017/11/08 06:00
PHST- 2017/11/08 06:00 [pubmed]
PHST- 2017/11/08 06:01 [medline]
PHST- 2017/11/08 06:00 [entrez]
AID - 10.1021/acsami.7b12986 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2017 Nov 29;9(47):41435-41442. doi: 
      10.1021/acsami.7b12986. Epub 2017 Nov 15.